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STTH16R04CTSTN/a20avaiUltrafast recovery diodes


STTH16R04CT ,Ultrafast recovery diodesFeatures and benefitsSTTH16R04CT STTH16R04CFP■ Very low switching losses■ High frequency and/or hig ..
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T6 ,1/4 in Multiturn Fully Sealed Container, Military and Professional GradeFEATURES• Military and professional grade• 0.25 Watt at 85°C• CECC 41 101-005 (A, B, C, D)• MIL-R-2 ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
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STTH16R04CT
Ultrafast recovery diodes
March 2007 Rev 1 1/10
STTH16R04C

Ultrafast recovery diode
Main product characteristics
Features and benefits
Very low switching losses High frequency and/or high pulsed current
operation High junction temperature Insulated package: TO-220FPAB
Electrical insulation = 1500 VRMS
Capacitance = 12 pF
Description

The STTH16R04C series uses ST's new 400 V
planar Pt doping technology. The STTH16R04C is
specially suited for switching mode base drive and
transistor circuits.
Packaged in through-the-hole and surface mount
packages, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection.
Order codes


Characteristics STTH16R04C
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1 Characteristics



When the diodes are used simultaneously:
ΔTj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Table 2. Thermal parameters
STTH16R04C Characteristics
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o evaluate the conduction losses use the following equation:
P = 0.83 x IF(AV) + 0.034 x IF2 (RMS)

Table 3. Static electrical characteristics
Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
Table 4. Dynamic characteristics
Characteristics STTH16R04C
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Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Relative variation of thermal
impedance junction to case
versus pulse duration TO-220FPAB
Figure 5. Peak reverse recovery current
versus dIF/dt (typical values)
Figure 6. Reverse recovery time versus F /dt (typical values)
STTH16R04C Characteristics
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Figure 7. Reverse recovery charges versus
dIF/dt (typical values)
Figure 8. Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, eCU = 35 µm)
Figure 9. Relative variations of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dIF /dt (typical values)
Figure 11. Forward recovery time versus dIF /dt
(typical values)
Figure 12. Junction capacitance versus
reverse voltage applied (typical
values)
Package information STTH16R04C
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2 Package information
Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 Nm (TO-220FPAB) / 0.55 Nm (TO-220AB) Maximum torque value: 1.0 Nm (TO-220FP AB) / 0.70 Nm (TO-220AB)

Figure 13. D2 PAK footprint (dimensions in mm)
Table 5. D2 PAK dimensions
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