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STTH16L06CG-TR |STTH16L06CGTRSTN/a566avaiTURBO 2 Ultrafast High Voltage Rectifier
STTH16L06CG-TR |STTH16L06CGTRSTMN/a169avaiTURBO 2 Ultrafast High Voltage Rectifier


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STTH16L06CG-TR
TURBO 2 Ultrafast High Voltage Rectifier
April 2011 Doc ID 10760 Rev 2 1/10
STTH16L06C
urbo 2 ultrafast high voltage rectifier
Features
Ultrafast switching Low reverse recovery current Reduces switching and conduction losses Low thermal resistance
Description

The STTH16L06, which is using ST Turbo 2 600 V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
Table 1. Device summary
Characteristics STTH16L06C
2/10 Doc ID 10760 Rev 2
1 Characteristics



When the diodes 1 and 2 are used simultaneously:
Δ Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
o evaluate the maximum conduction losses use the following equation:
P = 1.06 x IF(AV) + 0.036 IF2 (RMS)
Table 2. Absolute ratings (limiting values)
Table 3. Thermal resistance
Table 4. Static electrical characteristics
Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH16L06C Characteristics
Doc ID 10760 Rev 2 3/10



Table 5. Dynamic electrical characteristics
Figure 1. Conduction losses versus average
current
Figure 2. Forward voltage drop versus
forward current
Figure 3. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AB, D2 PAK)
Figure 4. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Characteristics STTH16L06C
4/10 Doc ID 10760 Rev 2



Figure 5. Peak reverse recovery current
versus dIF/dt (typical values, per
diode)
Figure 6. Reverse recovery time versus dIF/dt
(typical values, per diode)
Figure 7. Reverse recovery charges versus F /dt (typical values, per diode)
Figure 8. Reverse recovery softness factor
versus dIF/dt (typical values, per
diode)
Figure 9. Relative variations of dynamic
parameters versus junction
temperature
Figure 10. Transient peak forward voltage
versus dIF/dt (typical values, per
diode)
STTH16L06C Characteristics
Doc ID 10760 Rev 2 5/10


Figure 11. Forward recovery time versus dIF/dt
(typical values, per diode)
Figure 12. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
Figure 13. Thermal resistance junction to ambient versus copper surface under tab (epoxy
FR4, copper thickness = 35 µm) (D2 PAK)
Package mechanical data STTH16L06C
6/10 Doc ID 10760 Rev 2 Package mechanical data Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 6. TO-220AB dimensions
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