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STTH1212STN/a46avaiUltrafast recovery
STTH1212DSTN/a215avaiUltrafast recovery


STTH1212D ,Ultrafast recoveryapplications. The improved performance in low leakage current, and therefore thermal runaway guard ..
STTH12R06D ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
STTH12R06DIRG ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITS■ Ultrafast switchingK■ Low reverse recovery current■ Low thermal resistanceA■ ..
STTH12R06FP ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERFEATURES AND BENEFITSKn Ultrafast switchingn Low reverse recovery currentn Reduces switching losses ..
STTH12R06G ,TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIERapplications.Table 2: Order CodesPart Number MarkingSTTH12R06D STTH12R06DSTTH12R06FP STTH12R06FPSTT ..
STTH12S06FP ,Turbo 2 ultrafast high voltage rectifierapplications.reverse recovery current of the STTH12S06, reduces significantly the switching power l ..
T6 ,1/4 in Multiturn Fully Sealed Container, Military and Professional GradeFEATURES• Military and professional grade• 0.25 Watt at 85°C• CECC 41 101-005 (A, B, C, D)• MIL-R-2 ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
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T62M99A , Digital Sound Processor Embedded 48K Bits SRAM


STTH1212-STTH1212D
Ultrafast recovery
March 2006 Rev 1 1/9
STTH1212

Ultrafast recovery - 1200 V diode
Main product characteristics
Features and benefits
Ultrafast, soft recovery Very low conduction and switching losses High frequency and/or high pulsed current
operation High reverse voltage capability High junction temperature
Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
Order codes
Characteristics STTH1212
2/9
1 Characteristics




To evaluate the conduction losses use the following equation:
P = 1.5 x IF(AV) + 0.033 IF2 (RMS)
Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)
Table 2. Thermal parameter
Table 3. Static electrical characteristics
Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
STTH1212 Characteristics
3/9


Table 4. Dynamic characteristics
Figure 1. Conduction losses versus
average current
Figure 2. Forward voltage drop versus
forward current
Characteristics STTH1212
4/9



Figure 3. Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4. Peak reverse recovery current
versus dIF/dt (typical values)
Figure 5. Reverse recovery time versus F /dt (typical values)
Figure 6. Reverse recovery charges versus F /dt (typical values)
Figure 7. Softness factor versus dIF /dt
(typical values)
Figure 8. Relative variations of dynamic
parameters versus junction
temperature
STTH1212 Characteristics
5/9


Figure 9. Transient peak forward voltage
versus dIF/dt (typical values)
Figure 10. Forward recovery time versus dIF/dt
(typical values)
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab (Epoxy printed circuit
board FR4, ecu = 35 µm)
Package mechanical data STTH1212
6/9 Package mechanical data
Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.55 Nm (TO-220AC)
Maximum torque value: 0.7 Nm (TO-220AC)
Table 5. T0-220AC dimensions
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