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STTH108ASTMicroeN/a20000avaiHIGH VOLTAGE ULTRAFAST RECTIFIER


STTH108A ,HIGH VOLTAGE ULTRAFAST RECTIFIERapplications.ABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitive peak reverse ..
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STTH108A
HIGH VOLTAGE ULTRAFAST RECTIFIER
STTH108/A
January 2003- Ed:2
HIGH VOLTAGE ULTRAFAST RECTIFIER
The STTH108, whichis using ST ultrafast high
voltage planar technology,is specially suited for
free-wheeling, clamping, snubbering, demagneti-
zationin power supplies and other power switching
applications.
DESCRIPTION
Low forward voltage drop High reliability High surge current capability Soft switchingfor reduced EMI disturbances Planar technology
FEATURES AND BENEFITS
ABSOLUTE RATINGS
(limiting values)
MAIN PRODUCT CHARACTERISTICS
STTH108/A evaluate the maximum conduction losses use the following equation:
P=1.05xIF(AV)+ 0.20IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
THERMAL PARAMETERS
DYNAMIC ELECTRICAL CHARACTERISTICS
STTH108/A
P(W)

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Fig.1:
Conduction losses versus averagecurrent.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 (A)FM
Fig. 2:
Forward voltage drop versus forward
current.
Z/Rth(j-c) th(j-c)

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Fig. 3-1:
Relative variationof thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Lleads= 10mm) (DO-41).
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Z/Rth(j-c) th(j-c)
Fig. 3-2:
Relative variationof thermal impedance
junction ambient versus pulse duration (epoxy
FR4) (SMA). (°C/W)th(j-a)
012 34567 89 10
Fig. 4-1:
Thermal resistance junctionto ambient
versus copper surface under each lead (epoxy
printed circuit board FR4, copper thickness: 35μm)
(DO-41).
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 (°C/W)th(j-a)
Fig. 4-2:
Thermal resistance junctionto ambient
versus copper surface under each lead (epoxy
printed circuit board FR4, copper thickness: 35μm)
(SMA).
STTH108/A
PACKAGE MECHANICAL DATA

SMA
FOOTPRINT
(in millimeters)
STTH108/A
PACKAGE MECHANICAL DATA

DO41 Epoxy meets UL 94,V0
Information furnishedis believedtobe accurateandreliable. However,STMicroelectronicsassumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patents orother rights ofthird parties whichmay result fromitsuse.Nolicenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change without notice. This publication supersedesand replacesall information previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express written
approvalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2003 STMicroelectronics- Printedin Italy-All rights reserved.
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