STTA812DI ,TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODEELECTRICAL CHARACTERISTICSSymbol Parameter Test conditions Min Typ Max UnitV Forward voltage drop I ..
STTA9012TV1 ,TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODEELECTRICAL CHARACTERISTICS (per diode)TURN-OFF SWITCHING Symbol Parameter Test conditions Min Typ M ..
STTA9012TV2 ,TURBOSWITCHFEATURES AND BENEFITSULTRA-FAST, SOFT RECOVERY.VERY LOW OVERALL POWER LOSSES INBOTH THE DIODE AND T ..
STTB1206DI , TURBOSWITCH™"B".ULTRA-FAST HIGH VOLTAGE DIODE
STTH1002CB ,HIGH EFFICIENCY ULTRAFAST DIODEapplications.STTH1002CBABSOLUTE RATINGS (limiting values, per diode)Symbol Parameter Value UnitV Re ..
STTH1002CFP ,HIGH EFFICIENCY ULTRAFAST DIODEELECTRICAL CHARACTERISTICS (per diode)Symbol Parameter Tests conditions Min. Typ. Max. UnitI * Reve ..
T6 ,1/4 in Multiturn Fully Sealed Container, Military and Professional GradeFEATURES• Military and professional grade• 0.25 Watt at 85°C• CECC 41 101-005 (A, B, C, D)• MIL-R-2 ..
T620600W ,SNUBBERLESS TRIACFEATURESA An I =6A 2 1TRMSn V =V = 600VDRM RRMGn EXCELLENT SWITCHING PERFORMANCESn INSULATING VOLTA ..
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A , Digital Sound Processor Embedded SRAM
T62M0002A-K , Digital Sound Processor Embedded SRAM
T62M99A , Digital Sound Processor Embedded 48K Bits SRAM
STTA812D-STTA812DI
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
TURBOSWITCHisa trademarkof STMicroelectronics. ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR. HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION. HIGH REVERSE VOLTAGE CAPABILITY INSULATED PACKAGE: TO-220AC Ins.
Electrical insulation: 2500VRMS
Capacitance: 7pF.
FEATURES AND BENEFITSTURBOSWITCH 1200V drastically cuts lossesin
all high voltage operations which requireextremely
fast, soft and noise-free power diodes. Dueto their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all “freewheel
mode” operations.
They are particularly suitablein motor control
circuitries,orin the primaryof SMPSas snubber,
clampingor demagnetizing diodes. They are also
suitable for secondaryof SMPSas high voltage
rectifier diodes.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICS
ABSOLUTE RATINGS (limiting values)
STTA812D/DI/GTURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
STTA812D/DI/GTest pulses:*tp =380μs,δ <2% tp=5ms,δ <2%
STATIC ELECTRICAL CHARACTERISTICS
THERMAL AND POWER DATA
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
TURN-ON SWITCHING evaluate the maximum conduction losses use the following equation:
P=Vto xIF(AV) +rdxIF2 (RMS)
STTA812D/DI/G 46 8 100
P1(W)
Fig.1: Conduction losses versus averagecurrent.
0.0 1.0 2.0 3.0 4.0 5.00.1
IFM(A)
Fig.2: Forward voltage drop versus forward cur-
rent (maximum values).
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig.3: Relative variationof thermal impedance
junctionto case versus pulse duration. 100 200 300 400 5000
trr(ns)
Fig.5: Reverse recovery time versus dIF/dt (90%
confidence). 100 200 300 400 5000.80
S factor
Fig.6: Softness factor (tb/ta) versus dIF/dt (typical
values). 100 200 300 400 5000
IRM(A)
Fig.4: Peak reverse recovery current versus
dIF/dt (90% confidence).
STTA812D/DI/G 50 75 100 1250.7
Fig.7: Relative variationof dynamic parameters
versus junction temperature(reference Tj=125°C). 100 200 300 400 5000
VFP(V)
Fig.8: Transient peak forward voltage versus
dIF/dt (90% confidence). 100 200 300 400 500100
tfr(ns)
Fig.9: Forward recovery time versus dIF/dt (90%
confidence).
STTA812D/DI/G
Fig.A: “FREEWHEEL” MODE.
The 1200V TURBOSWITCH series has been
designed to provide the lowest overall power
lossesinall high frequencyor high pulsed current
operations.In such applications (FigAto D),the
wayof calculating the power lossesis given below:
APPLICATION DATA
STTA812D/DI/G
Fig.E: STATIC CHARACTERISTICS
Conduction losses:
P1=Vt0 .IF(AV) +Rd .IF2 (RMS)
Reverse losses:
P2=VR .IR .(1-δ)
Fig.B: SNUBBER DIODE.
Fig.C: DEMAGNETIZING DIODE.
Fig.D: RECTIFIER DIODE.
STATIC& DYNAMIC CHARACTERISTICS. POWER LOSSES.
