STTA3006CP ,TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODESELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Test conditions Min Typ Max UnitV Forward ..
STTA3006CW ,TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODESapplications in power factor control circuitries.600V to 1200V. Packaged either in TO-247 or SOT93, ..
STTA3006P ,TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODEFEATURES AND BENEFITSSTTA6006TV1 STTA6006TV2SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:FREEWHEEL OR BO ..
STTA3006PI ,TURBOSWITCHSTTA3006P/PISTTA6006TV1/2®TURBOSWITCH
STTA3006CP-STTA3006CW
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODES
SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:
FREEWHEEL OR BOOSTER DIODE.
ULTRA-FAST AND SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY OPERATIONS.
FEATURES AND BENEFITSThe TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
and is particularly suitable and efficient in motor
control freewheel applications and in booster diode
applications in power factor control circuitries.
Packaged either in TO-247 or SOT93, these 600V
devices are particularly intended for use on 240V
domestic mains.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICSTM : TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values, per diode)
STTA3006CW/CPTURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODES
November 1999 Ed : 4B
1/8
Test pulse : * tp = 380 μs, δ < 2%
** tp = 5 ms, δ < 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL AND POWER DATA
DYNAMIC ELECTRICAL CHARACTERISTICS (per diode)
TURN-OFF SWITCHING
TURN-ON SWITCHING To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2 (RMS)
STTA3006CW/CP2/8
2468 10 12 14 16 180
P1(W)
Fig. 1: Conduction losses versus average current.1E-4 1E-3 1E-2 1E-1 1E+00.0
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.01
VFM(V)
Fig. 2: Forward voltage drop versus forward
current (maximum values). 100 200 300 400 500 600 700 800 900 10000
IRM(A)
Fig. 4: Peak reverse recovery current versus
dIF/dt (90% confidence). 100 200 300 400 500 600 700 800 900 10000
trr(ns)
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence).
S factor 100 200 300 400 500 600 700 800 900 10000.0
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical
values).
STTA3006CW/CP3/8
50 75 100 1250.7Fig. 7: Relative variation of dynamic parameters
versus junction temperature (reference Tj=125°C). 100 200 300 400 500 600 700 800 900 10000
VFP(V)
Fig. 8: Transient peak forward voltage versus
dIF/dt (90% confidence). 100 200 300 400 500 600 700 800 900 100050
tfr(ns)
Fig. 9: Forward recovery time versus dIF/dt (90%
confidence).
STTA3006CW/CP4/8
Fig. A : "FREEWHEEL" MODE.The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
"FREEWHEEL Mode" application (Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
APPLICATION DATA
STTA3006CW/CP5/8
Turn-on losses :(in the transistor, due to the diode)
P5 = VR × IRM 2 × ( 3 + 2 × S ) × F
6 x dIF ⁄ dt VR × IRM × IL × ( S + 2 ) × F
2 x dIF ⁄ dt
Turn-off losses (in the diode) :P3 = VR × IRM 2 × S × F
6 x dIF ⁄ dt
P3 and P5 are suitable for power MOSFET and
IGBT
Fig. B: STATIC CHARACTERISTICS
Fig. C: TURN-OFF CHARACTERISTICS
Fig. C: TURN-ON CHARACTERISTICS
Conduction losses :P1 = Vt0 . IF(AV) + Rd . IF2 (RMS)
Reverse losses :P2 = VR . IR . (1 - δ)
Turn-on losses :P4 = 0.4 (VFP - VF) . IFmax . tfr . F
APPLICATION DATA (Cont’d)
STTA3006CW/CP6/8
