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STTA12006TV1-STTA12006TV2
TURBOSWITCH
November 1999 - Ed: 4C
SPECIFIC TO "FREEWHEEL MODE" OPERATIONS:
FREEWHEEL OR BOOSTER DIODE.
ULTRA-FAST RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY OPERATIONS.
INSULATED PACKAGE : ISOTOP
Electrical insulation : 2500VRMS
Capacitance < 45 pF
FEATURES AND BENEFITSThe TURBOSWITCH is a very high performance
series of ultra-fast high voltage power diodes from
600V to 1200V.
TURBOSWITCH family, drastically cuts losses in
both the diode and the associated switching IGBT
or MOSFET in all "freewheel mode" operations
and is particularly suitable and efficient in motor
control freewheel applications and in booster diode
applications in power factor control circuitries.
Packaged either in ISOTOP or SOD93 these 600V
devices are particularly intended for use on 240V
domestic mains.
DESCRIPTION
MAIN PRODUCT CHARACTERISTICSTM : TURBOSWITCH is a trademark of STMicroelectronics
ABSOLUTE RATINGS (limiting values, per diode)
STTA6006P
STTA12006TV1/2TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE
1/8
Test pulses : * tp = 380 μs, δ < 2%
** tp = 5 ms, δ < 2%
STATIC ELECTRICAL CHARACTERISTICS
THERMAL AND POWER DATA (Per diode)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
TURN-ON SWITCHINGTo evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2 (RMS)
STTA12006TV1/2 / STTA6006P2/8
P1(W) 5 10 15 20 25 30 35 40 45 50 55 600
Fig. 1: Conduction losses versus average current.
VFM(V) 10 100 10000.00
Fig. 2: Forward voltage drop versus forward
current.
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
IRM(A) 100 200 300 400 500 600 700 800 900 10000
Fig. 4: Peak reverse recovery current versus
dIF/dt.
100 200 300 400 500 600 700 800 900 100050
350 trr(ns)
Fig. 5: Reverse recovery time versus dIF/dt.
Sfactor 100 200 300 400 500 600 700 800 90010000.20
Fig. 6: Softness factor (tb/ta) versus dIF/dt.
STTA12006TV1/2 / STTA6006P3/8
25 50 75 100 125 1500.5Fig. 7: Relative variation of dynamic parametersversus junction temperature (reference Tj=125°C).
VFP(V) 200 400 600 800 1000 12000.0
Fig. 8: Transient peak forward voltage versus
dIF/dt.
tfr(ns) 200 400 600 800 1000 12000
Fig. 9: Forward recovery time versus dIF/dt.
STTA12006TV1/2 / STTA6006P4/8
Fig. A : "FREEWHEEL" MODE.The TURBOSWITCH is especially designed to
provide the lowest overall power losses in any
"FREEWHEEL Mode" application (Fig.A)
considering both the diode and the companion
transistor, thus optimizing the overall performance
in the end application.
The way of calculating the power losses is given
below:
APPLICATION DATA
STTA12006TV1/2 / STTA6006P5/8
Turn-on losses :(in the transistor, due to the diode)
P5 = VR × IRM 2 × ( 3 + 2 × S ) × F
6 x dIF ⁄ dt VR × IRM × IL × ( S + 2 ) × F
2 x dIF ⁄ dt
Turn-off losses (in the diode) :P3 = VR × IRM 2 × S × F
6 x dIF ⁄ dt
P3 and P5 are suitable for power MOSFET and
IGBT
Fig. B: STATIC CHARACTERISTICS
Fig. C: TURN-OFF CHARACTERISTICS
Fig. D: TURN-ON CHARACTERISTICS
Conduction losses :P1 = Vt0 . IF(AV) + Rd . IF2 (RMS)
Reverse losses :P2 = VR . IR . (1 - δ)
Turn-on losses :P4 = 0.4 (VFP - VF) . IFmax . tfr . F
APPLICATION DATA (Cont’d)
STTA12006TV1/2 / STTA6006P6/8
