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STT5PF20V
P-CHANNEL 20V
1/8October 2003
STT5PF20VP-CHANNEL 20V- 0.065Ω -5A SOT23-6L
2.5V-DRIVE STripFET™II POWER MOSFET TYPICAL RDS(on)= 0.065Ω (@4.5V) TYPICAL RDS(on)= 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFETis the latest developmentof
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance.
APPLICATIONS MOBILE PHONE APPLICATIONS DC-DC CONVERTERS BATTERY MANAGEMENTIN NOMADIC
EQUIPMENT
ORDERING INFORMATION
STT5PF20V2/8
ABSOLUTE MAXIMUM RATINGS) Pulsewidth limitedby safeoperating area
Note:Forthe P-CHANNEL MOSFET actual polarityof voltagesand currenthastobe reversed
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TJ=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/8
STT5PF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%.
STT5PF20V4/8
Static Drain-source On Resistance
Safe Operating Area Thermal Impedence Junction-PCB
Transconductance
Output Characteristics Transfer
5/8
STT5PF20V
Capacitance Variations
Normalized Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage
Source-drain Diode Forward Characteristics
STT5PF20V6/8
Fig.3: Test Circuit For Diode Recovery Behaviour
Fig.1: Switching Times Test Circuit For
Resistive Load
Fig.2: Gate Charge test Circuit
