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STT4PF20V
P-CHANNEL 20V
1/8May 2003
STT4PF20VP-CHANNEL 20V - 0.090 Ω - 3A SOT23-6L
2.7V-DRIVE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.090 Ω @ 4.5 V TYPICAL RDS(on) = 0.100 Ω @ 2.7 V ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS MOBILE PHONE APPLICATIONS DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
INTERNAL SCHEMATIC DIAGRAM
STT4PF20V
THERMAL DATA(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STT4PF20VSWITCHING ON(*)
SWITCHING OFF(*)
SOURCE DRAIN DIODE(*)
(*)Pulse width [ 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by TJMAX
ELECTRICAL CHARACTERISTICS (continued)
STT4PF20V Capacitance Variations
5/8
STT4PF20VNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STT4PF20V
Fig. 2: Gate Charge test Circuit
Fig. 1: Switching Times Test Circuits For Resistive Load
