STT3PF30L ,P-CHANNEL 30VSTT3PF30LP-CHANNEL 30V - 0.14 Ω - 3A SOT23-6LSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTT3PF3 ..
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STT5PF20V ,P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)JOFFSymbol Parameter Test Conditio ..
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STT3PF30L
P-CHANNEL 30V
1/8September 2002
STT3PF30LP-CHANNEL 30V - 0.14 Ω - 3A SOT23-6L
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.14 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs CELLULAR
MARKING STA3
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
INTERNAL SCHEMATIC DIAGRAM
STT3PF30LTHERMAL DATA
(*) Mounted on a 1 inch pad of 2 oz. Cu in FR-4 board
(**) Mounted on a minimum pad of 2 oz. Cu in FR-4 board
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STT3PF30LSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STT3PF30LOutput Characteristics Transfer Characteristics
5/8
STT3PF30LNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
STT3PF30L
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive Load
