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STT1NF100STN/a1680avaiN-CHANNEL 100 V


STT1NF100 ,N-CHANNEL 100 VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STT2PF60L ,P-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STT2PF60L ,P-CHANNEL 60VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STT3PF20V ,P-CHANNEL 20VSTT3PF20VP-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L2.7-DRIVE STripFET™ II POWER MOSFETTYPE V R IDSS DS( ..
STT3PF30L ,P-CHANNEL 30VSTT3PF30LP-CHANNEL 30V - 0.14 Ω - 3A SOT23-6LSTripFET™ II POWER MOSFETTYPE V R IDSS DS(on) DSTT3PF3 ..
STT4PF20V ,P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
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T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
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STT1NF100
N-CHANNEL 100 V
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PRELIMINARY DATA

September 2002
STT1NF100

N-CHANNEL 100V- 0.7Ω -1A SOT23-6L
STripFET™II POWER MOSFET
(1)ISD ≤1A, di/dt ≤350A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX. TYPICAL RDS(on) =0.7Ω EXCEPTIONAL dv/dt CAPABILITY VERY LOW Qg
DESCRIPTION

This Power MOSFETis the latest developmentof ST-
Microelectronics unique “Single Feature Size™” strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps thereforea remarkable manufacturing re-
producibility.
APPLICATIONS
DC-DC& DC-AC CONVERTERS DC MOTOR CONTROL (DISK DRIVES, etc.) SYNCHRONOUS RECTIFICATION
MARKING
STQ0
ABSOLUTE MAXIMUM RATINGS

(�) Pulse width limitedby safe operating area
STT1NF100
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THERMAL DATA

(*) When mountedon FR-4 boardof 1inch² pad, 0.5ozCu
ELECTRICAL CHARACTERISTICS
(TCASE=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
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STT1NF100
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STT1NF100
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Fig.3:
Test Circuit For Diode Recovery Behaviour
Fig.2:
Gate Charge test CircuitFig.1: Switching Times Test Circuit For
Resistive Load
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STT1NF100
STT1NF100
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