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STS8DNH3LLSTN/a2032avaiDUAL N-CHANNEL 30V


STS8DNH3LL ,DUAL N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)jTAB.2 OFFSymbol Parameter Test Co ..
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STS8DNH3LL
DUAL N-CHANNEL 30V
1/9June 2004
STS8DNH3LL

DUAL N-CHANNEL 30V - 0.018 Ω - 8A SO-8
LOW GATE CHARGE STripFET™ III POWER MOSFET
Rev.0.2 TYPICAL RDS(on) = 0.018Ω OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
DESCRIPTION

This application specific MOSFET is the Third generation
of STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor shows the
best trade-off between on-resistance and gate charge.
When used as high and low side in buck regulators, it
gives the best performance in terms of both conduction
and switching losses. This is extremely important for
motherboards where fast switching and high efficiency
are of paramount importance.
APPLICATIONS
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS FOR MOBILE PCS
Ordering Information
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area.
STS8DNH3LL
TAB.1 THERMAL DATA

(*) When mounted on 1 inch2 FR-4 board, 2 oz of Cu, t ≤ 10s
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
TAB.2 OFF
TAB.3 ON (*)
TAB.4 DYNAMIC
3/9
STS8DNH3LL
TAB.5 SWITCHING ON
TAB.6 SWITCHING OFF
TAB.7 SOURCE DRAIN DIODE

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS8DNH3LL
5/9
STS8DNH3LL
STS8DNH3LL
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