STS8DN3LLH5 ,Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 packageAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 30 VDS GSV Gate-s ..
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STS8DN3LLH5
Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 package
January 2010 Doc ID 16967 Rev 1 1/12
STS8DN3LLH5Dual N-channel 30 V , 0.0155 Ω, 10 A, SO-8 ripFET™ V Power MOSFET
Features R DS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
Application Switching applications
DescriptionThis STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Figure 1. Internal schematic diagram The value is rated according Rthj-pcb
Table 1. Device summary
Contents STS8DN3LLH52/12 Doc ID 16967 Rev 1
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STS8DN3LLH5 Electrical ratings
Doc ID 16967 Rev 1 3/12
1 Electrical ratings
Table 2. Absolute maximum ratings The value is rated according Rthj-pcb Pulse width limited by safe operating area
Table 3. Thermal resistance When mounted on FR-4 board of 1inch², 2oz Cu, t < 10sec
Electrical characteristics STS8DN3LLH5
4/12 Doc ID 16967 Rev 1
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Table 5. Dynamic
STS8DN3LLH5 Electrical characteristics
Doc ID 16967 Rev 1 5/12
Table 6. Switching times
Table 7. Source drain diode Pulse width limited by safe operating area Pulsed: pulse duration=300µs, duty cycle 1.5%
Electrical characteristics STS8DN3LLH5
6/12 Doc ID 16967 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
