STS7PF30L ,P-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERRWISE SPECIFIED)JOFFSymbol Parameter Test Conditi ..
STS8550 , PNP Silicon Transistor
STS8C5H30L ,N-CHANNEL 30V -0.018 OhmFeatures Figure 1: PackageTYPE V R IDSS DS(on) DSTS8C5H30L (N-Channel) 30 V < 0.022 Ω 8 ASTS8C5H30L ..
STS8DN3LLH5 ,Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 packageAbsolute maximum ratingsSymbol Parameter Value UnitV Drain-source voltage (V = 0) 30 VDS GSV Gate-s ..
STS8DN3LLH5 ,Dual N-channel 30 V, 0.0155 Ohm typ., 10 A STripFET(TM) V Power MOSFET in a SO-8 packageElectrical characteristics(T =25°C unless otherwise specified)CASETable 4. On/off statesSymbol Para ..
STS8DNF3LL ,DUAL N-CHANNEL 30VFeatureSO-8Size™" strip-based process. The resulting transistorshows the best trade-off between on- ..
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
T5750 ,UHF ASK/FSK TransmitterBlock Diagram UHF ASK/FSK UHF ASK/FSKRemote control transmitter Remote control receiver1 Li cellT5 ..
STS7PF30L
P-CHANNEL 30V
1/6
PRELIMINARY DATADecember 2002
STS7PF30LP-CHANNEL 30V- 0.016Ω -7A SO-8
STripFET™II POWER MOSFET
Note: FortheP-CHANNEL MOSFETactual polarityof voltagesand
currenthastobe reversed TYPICAL RDS(on)= 0.016Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTIONThis Power Mosfetis the latest developmentof ST-
Microelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps thereforea remarkable man-
ufacturing reproducibility.
APPLICATIONS BATTERY MANAGEMENTIN NOMADIC
EQUIPMENT POWER MANAGEMENTIN CELLULAR
PHONES
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limitedby safe operating area
STS7PF30L2/6
THERMAL DATA(#) When mountedon1 inch2 FR4 Board,2ozofCu and t ≤ 10s
ELECTRICAL CHARACTERISTICS (TJ=25°C UNLESS OTHERRWISE SPECIFIED)
OFF (1)
DYNAMIC
3/6
STS7PF30L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON(2)
SWITCHING OFF(2)
SOURCE DRAIN DIODE (2)
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STS7PF30L4/6
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
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STS7PF30L
STS7PF30L6/6
