STS6DNF30V ,DUAL N-CHANNEL 30V 0.026 OHM 6A SO-8 2.5V DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS6NF20V ,N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS6NF20V ,N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETSTS6NF20VN-CHANNEL 20V - 0.030 Ω - 6A SO-82.7V-DRIVE STripFET™ II POWER MOSFETTYPE V R IDSS DS(on) ..
STS6PF30L ,P-CHANEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERRWISE SPECIFIED)JOFFSymbol Parameter Test Conditi ..
STS7C4F30L ,N-P-CHANNEL 30V- 0.018 OHM- 7AELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS7DNF30L ,DUAL N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
T5750 ,UHF ASK/FSK TransmitterBlock Diagram UHF ASK/FSK UHF ASK/FSKRemote control transmitter Remote control receiver1 Li cellT5 ..
STS6DNF30V
DUAL N-CHANNEL 30V 0.026 OHM 6A SO-8 2.5V DRIVE STRIPFET II POWER MOSFET
1/8July 2002
STS6DNF30VDUAL N-CHANNEL 30V - 0.026Ω - 6A SO-8
2.5V-DRIVE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.026Ω (@4.5V) TYPICAL RDS(on) = 0.030Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalanche characteristics and less
critical alignment steps therefore a remarkable man-
ufacturing reproducibility.
APPLICATIONS BATTERY SAFETY UNIT IN NOMADIC
EQUIPMENT DC-DC CONVERTERS POWER MANAGEMENT IN PORTABLE/
DESKTOP PCS
ABSOLUTE MAXIMUM RATINGS(�) Pulse width limited by safe operating area
STS6DNF30V
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STS6DNF30V
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Safe Operating Area Thermal Impedance
STS6DNF30V
Transconductance
Transfer Characteristics
Gate Charge vs Gate-source Voltage Capacitance Variations
Static Drain-source On Resistance
Output Characteristics
5/8
STS6DNF30V
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
STS6DNF30V
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
