STS6DNF30L ,DUAL N-CHANNEL 30VSTS6DNF30L®DUAL N - CHANNEL 30V - 0.022Ω - 6A SO-8STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTS6 ..
STS6DNF30V ,DUAL N-CHANNEL 30V 0.026 OHM 6A SO-8 2.5V DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS6NF20V ,N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS6NF20V ,N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETSTS6NF20VN-CHANNEL 20V - 0.030 Ω - 6A SO-82.7V-DRIVE STripFET™ II POWER MOSFETTYPE V R IDSS DS(on) ..
STS6PF30L ,P-CHANEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERRWISE SPECIFIED)JOFFSymbol Parameter Test Conditi ..
STS7C4F30L ,N-P-CHANNEL 30V- 0.018 OHM- 7AELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
T520V227M006ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T5743P3 ,UHF ASK/FSK ReceiverBlock Diagram UHF ASK/FSKUHF ASK/FSKRemote control transmitter Remote control receiverT5743U2741BDe ..
T5743P3 ,UHF ASK/FSK ReceiverFeatures• Two Different IF Receiving Bandwidth Versions Are Available (B = 300 kHz or 600 kHz)IF• 5 ..
T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
T5744 ,UHF ASK Receiver ICFeatures• Minimal External Circuitry Requirements, no RF Components on the PC Board Except Matching ..
T5750 ,UHF ASK/FSK TransmitterFeatures• Integrated PLL Loop Filter ESD Protection also at ANT1/ANT2 (4 kV HBM/200 V MM; Except P ..
STS6DNF30L
DUAL N-CHANNEL 30V
STS6DNF30LDUAL N - CHANNEL 30V - 0.022Ω - 6A SO-8
STripFET POWER MOSFET TYPICAL RDS(on) = 0.022 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the second generation of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
April 1999
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
1/8
THERMAL DATA(*) Mounted on FR-4 board (Steady State)
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STS6DNF30L2/8
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area Thermal Impedance
STS6DNF30L3/8
Output Characteristics
Transconductance
Gate Charge vs Gate-source Voltage
Transfer Characteristics
Static Drain-source On Resistance
Capacitance Variations
STS6DNF30L4/8
Normalized Gate Threshold Voltage vs
Temperature
Source-drain Diode Forward Characteristics
Normalized On Resistance vs Temperature
STS6DNF30L5/8
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STS6DNF30L6/8
