STS5PF20V ,P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)JOFFSymbol Parameter Test Conditio ..
STS5PF30L ,PSTS5PF30LP-CHANNEL 30V - 0.070 Ω - 5A SO-8STRIPFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTS5PF30L 30V ..
STS6DNF30L ,DUAL N-CHANNEL 30VSTS6DNF30L®DUAL N - CHANNEL 30V - 0.022Ω - 6A SO-8STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTS6 ..
STS6DNF30V ,DUAL N-CHANNEL 30V 0.026 OHM 6A SO-8 2.5V DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS6NF20V ,N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS6NF20V ,N-CHANNEL 20V 0.030 OHM 6A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETSTS6NF20VN-CHANNEL 20V - 0.030 Ω - 6A SO-82.7V-DRIVE STripFET™ II POWER MOSFETTYPE V R IDSS DS(on) ..
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T5743P3-TGQ ,UHF ASK/FSK Receiverapplications are in the areas of telemetering, security technology and keyless-entrysystems. It can ..
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STS5PF20V
P-CHANNEL 20V
1/8March 2004
STS5PF20VP-CHANNEL 20V- 0.065Ω -5A SO-8
2.5V-DRIVE STripFET™II POWER MOSFET TYPICAL RDS(on)= 0.065Ω (@4.5V) TYPICAL RDS(on)= 0.085Ω (@2.5V) ULTRA LOW THRESHOLD GATE DRIVE (2.5V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTIONThis Power MOSFETis the latest developmentof
STMicroelectronics unique “Single Feature Size™”
strip-based process. The resulting transistor shows
extremely extremely low on-resistance when driven 2.5V.
APPLICATIONS POWER MANAGEMENTIN CELLULAR
PHONES DC-DC CONVERTERS BATTERY MANAGEMENTIN NOMADIC
EQUIPMENT
ORDER CODES
STS5PF20V2/8
ABSOLUTE MAXIMUM RATINGS) Pulsewidth limitedby safeoperating area
Note:Forthe P-CHANNEL MOSFET actual polarityof voltagesand currenthastobe reversed
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TJ=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
3/8
STS5PF20V
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%.
STS5PF20V4/8
Safe Operating Area Thermal Impedence
Static Drain-source On ResistanceTransconductance
Output Characteristics Transfer
5/8
STS5PF20V
Capacitance Variations
Normalized Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage
Source-drain Diode Forward Characteristics
STS5PF20V6/8
Fig.3: Test Circuit For Diode Recovery Behaviour
Fig.1: Switching Times Test Circuit For
Resistive Load
Fig.2: Gate Charge test Circuit
