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STS5DNF20VSTMN/a2500avaiN-CHANNEL 20V


STS5DNF20V ,N-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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STS5DNF20V
N-CHANNEL 20V
1/8August 2002
STS5DNF20V

N-CHANNEL 20V - 0.030 Ω - 5A SO-8
2.7V-DRIVE STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area.
INTERNAL SCHEMATIC DIAGRAM
STS5DNF20V
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (*)
DYNAMIC
3/8
STS5DNF20V

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS5DNF20V
Output Characteristics Transfer Characteristics
5/8
STS5DNF20V

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature . .
STS5DNF20V
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive

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