STS4NF100 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS4NF100 ,N-CHANNEL 100VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 100 VDS GSV Drain ..
STS4PF20V ,P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS5DNE30L ,DUAL N-CHANNEL 30VSTS5DNE30L®N - CHANNEL 30V - 0.039Ω - 5A SO-8STripFET™ POWER MOSFETPRELIMINARY DATATYPE V R IDSS DS ..
STS5DNE30L ,DUAL N-CHANNEL 30VFeatureSize™ " strip-based process. The resultingSO-8transistor shows extremely high packing densit ..
STS5DNF20V ,N-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
T520D337M006ATE015 , Using the PWR091EVM Dual-Output DC/DC Analog With PMBus Interface
T520D477M004ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520T476M006ATE070 , (Low ESR, Surge Robust) 10 pcs.
T520V157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M004ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M006ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
STS4NF100
N-CHANNEL 100V
1/8July 2001
STS4NF100N-CHANNEL 100V - 0.065 Ω - 4A SO-8
STripFET™ II POWER MOSFET TYPICAL RDS(on) = 0.065 Ω EXCEPTIONAL dv/dt CAPABILITY 100 % AVALANCHE TESTED APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTIONThis MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area.
INTERNAL SCHEMATIC DIAGRAM
STS4NF100THERMAL DATA
(*) Mounted on FR-4 board (t [ 10 sec.)
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)OFF
ON (*)
DYNAMIC
3/8
STS4NF100SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS4NF100 Capacitance Variations
5/8
STS4NF100Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature . .
STS4NF100
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
