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STS4DPFS2LSSTN/a5000avaiP-CHANNEL 20V 0.06 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIER


STS4DPFS2LS ,P-CHANNEL 20V 0.06 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIERELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
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STS4DPFS2LS
P-CHANNEL 20V 0.06 OHM 4A SO-8 STRIPFET MOSFET PLUS SCHOTTKY RECTIFIER
1/8February 2001
STS4DPFS2LS

P-CHANNEL 20V - 0.06Ω - 4A SO-8
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
DESCRIPTION

This product associates the latest low voltage
STripFET™ in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
SCHOTTKY ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area
(1) Starting Tj = 25°C, ID = 2.5 A, VDD = 20 V
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
STS4DPFS2LS
THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF
ON (1)
DYNAMIC
3/8
STS4DPFS2LS
ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
STS4DPFS2LS
Static Drain-source On ResistanceTransconductance
Output Characteristics
Safe Operating Area
5/8
STS4DPFS2LS
Source-drain Diode Forward Characteristics
Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature
Capacitance VariationsGate Charge vs Gate-source Voltage
STS4DPFS2LS
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuits For

Resistive Load
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