STS3DPFS30L ,P-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS3DPFS45 ,P-CHANNEL 45VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS4DNF30L ,DUAL N-CHANNEL 30V ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS4DNF-30L ,DUAL N-CHANNEL 30V ABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0) 30 VDS GSV Drain-g ..
STS4DNF60L ,N-CHANNEL 60VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS4DNFS30 ,N-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Repetitive Peak Reverse Voltage 30 VRRMI RMS F ..
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STS3DPFS30L
P-CHANNEL 30V
1/8February 2001
STS3DPFS30LP-CHANNEL 30V - 0.13Ω - 3A SO-8
STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
DESCRIPTIONThis product associates the latest low voltage
STripFET™ in p-channel version to a low drop
Schottky diode. Such configuration is extremely ver-
satile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and cel-
lular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
SCHOTTKY ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
(1)ISD ≤3A, di/dt ≤300A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
Note: For the P-CHANNEL MOSFET actual polarity of Voltages
and current has to be reversed
STS3DPFS30L
THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (1)
DYNAMIC
3/8
STS3DPFS30L
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
SCHOTTCKY STATIC ELETTRICAL CHARACTERISTICS
STS3DPFS30L
Thermal ImpedanceSafe Operating Area
Transconductance Static Drain-source On Resistance
Output Characteristics
5/8
STS3DPFS30L
Source-drain Diode Forward Characteristics
Normalized On Resistance vs TemperatureNormalized Gate Thereshold Voltage vs Temp.
Capacitance VariationsGate Charge vs Gate-source Voltage
STS3DPFS30L
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuits For Resistive Load
