STS3DPF20V ,DUAL P-CHANNEL 20VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
STS3DPF30L ,DUAL P-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STS3DPF60L ,DUAL P-CHANNEL 60VAbsolute Maximum ratingsSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 60 VDS GSV Drain- ..
STS3DPFS30L ,P-CHANNEL 30VELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS3DPFS45 ,P-CHANNEL 45VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS4DNF30L ,DUAL N-CHANNEL 30V ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
T520D157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520D337M006ATE015 , Using the PWR091EVM Dual-Output DC/DC Analog With PMBus Interface
T520D477M004ATE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520T476M006ATE070 , (Low ESR, Surge Robust) 10 pcs.
T520V157M006ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
T520V227M004ASE015 , CONDUCTIVE POLYMER CHIP CAPACITORS
STS3DPF20V
DUAL P-CHANNEL 20V
1/8June 2002
STS3DPF20VDUAL P-CHANNEL 20V - 0.090 Ω - 3A SO-8
STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.090 Ω @ 4.5 V TYPICAL RDS(on) = 0.1 Ω @ 2.7 V STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY ULTRA LOW THRESHOLD
GATE DRIVE (2.7 V)
DESCRIPTIONThis Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT MOBILE PHONE APPLICATIONS
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
INTERNAL SCHEMATIC DIAGRAM
STS3DPF20VTHERMAL DATA
(*) When Mounted on 0.5 in2 pad of 2 oz.copper
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF
ON (*)
DYNAMIC
3/8
STS3DPF20VSWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS3DPF20V Capacitance Variations
5/8
STS3DPF20VNormalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature .
STS3DPF20V
Fig. 2: Gate Charge test Circuit
Fig. 3: Test Circuit For Diode Recovery Behaviour
Fig. 1: Switching Times Test Circuits For Resistive Load
