STS3C2F100 ,N-CHANNEL 100VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)jTAB.2 OFFSymbol Parameter Test Co ..
STS3C3F30L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS3DNE60L ,DUAL N-CHANNEL 60VSTS3DNE60L®N - CHANNEL 60V - 0.065W - 3A SO-8STripFET
STS3C2F100
N-CHANNEL 100V
N-CHANNEL 100V - 0.110 Ω - 3A SO-8
P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8
COMPLEMENTARY PAIR STripFET™ POWER MOSFET
1/11June 2004
STS3C2F100Rev.1.0.1 TYPICAL RDS(on) (N-Channel) = 0.110 Ω TYPICAL RDS(on) (P-Channel) = 0.320 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY ULTRA LOW GATE CHARGE ULTRA LOW ON-RESISTANCE
DESCRIPTIONThis MOSFET is the second generation of STMicroelec-
tronis unique "Single Feature Size™" strip-based pro-
cess. The resulting transistor shows extremely high
packing density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
APPLICATIONS DC MOTOR DRIVES AUDIO AMPLIFIER
Ordering Information
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area. Note: P-CHANNEL MOSFET actual polarity of voltages and current
has to be reversed
STS3C2F100
TAB.1 THERMAL DATA(1) when mounted on 1 in2 pad of 2 oz. copper, t ≤ 10sec.
ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified)
TAB.2 OFF
TAB.3 ON
TAB.4 DYNAMIC
3/11
STS3C2F100
TAB.5 SWITCHING ON
TAB.6 SWITCHING OFF
TAB.7 SOURCE DRAIN DIODE(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•) Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS3C2F100
5/11
STS3C2F100
STS3C2F100
