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STS2DPF80STN/a1643avaiDUAL P-CHANNEL 80V
STS2DPF80STMicroelectronicsN/a40000avaiDUAL P-CHANNEL 80V


STS2DPF80 ,DUAL P-CHANNEL 80VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 80 VDS GSV Drain- ..
STS2DPF80 ,DUAL P-CHANNEL 80VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASETAB.2 OFFSymbol Parameter Test ..
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STS2DPF80
DUAL P-CHANNEL 80V
1/9June 2004
STS2DPF80

DUAL P-CHANNEL 80V - 0.21 Ω - 2.3A SO-8
STripFET™ POWER MOSFET
Rev.0.1 TYPICAL RDS(on) = 0.21 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
DESCRIPTION

This application specific Power MOSFET is the
second generation of STMicroelectronis unique
"Single Feature Size™" strip-based process. The
resulting transistor shows extremely high packing
density for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing reproduc-
ibility.
APPLICATIONS
DC/DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN CELLULAR
PHONES AND DISPLAY NEW GENERATION
Ordering Information
ABSOLUTE MAXIMUM RATINGS

(•) Pulse width limited by safe operating area. Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
STS2DPF80
TAB.1 THERMAL DATA

(*) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu and t [ 10 sec.
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
TAB.2 OFF
TAB.3 ON (*)
TAB.4 DYNAMIC
3/9
STS2DPF80
TAB.5 SWITCHING ON
TAB.6 SWITCHING OFF
TAB.7 SOURCE DRAIN DIODE

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS2DPF80
5/9
STS2DPF80
STS2DPF80
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