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Partno	Mfg	Dc	Qty	Available	Descript
STS25NH3LL	STM	N/a	10000	avai	N-CHANNEL 30V

STS25NH3LL ,N-CHANNEL 30VSTS25NH3LLN-CHANNEL 30V - 0.0027Ω -25A SO-8STripFET™ III MOSFET FOR DC-DC CONVERSIONPRELIMINARY DAT ..
STS2DNE60 ,NABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)60 VDS GSV Drain-g ..
STS2DNE60 ,NELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS2DNF30L ,N-CHANNEL 30VSTS2DNF30LN-CHANNEL 30V - 0.09 Ω - 3A SO-8STripFET™ POWER MOSFETTYPE V R IDSS DS(on) DSTS2DNF30L 30 ..
STS2DNFS30L ,N-CHANNEL 30V 0.09 OHM 3A SO-8 STRIPFET II MOSFET PLUS SCHOTTKY RECTIFIERELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFFSymbol Parameter Test Condi ..
STS2DPF20V ,DUAL P-CHANNEL 20V 0.014 OHM 2A SO-8 2.7V-DRIVE STRIPFET II POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 20 VDS GSV Drain- ..
T5008 , TELECOMMUNICATIONS PRODUCTS
T5012 , TELECOMMUNICATIONS PRODUCTS
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STS25NH3LL
N-CHANNEL 30V
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PRELIMINARY DATA
November 2002
STS25NH3LL
N-CHANNEL 30V- 0.0027Ω -25A SO-8
STripFET™ III MOSFET FOR DC-DC CONVERSION TYPICAL RDS(on)= 0.0027Ω OPTIMAL RDS(ON) xQg TRADE-OFF @4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED WORLD INDUSTRY’S LOWEST ON-
RESISTANCE
DESCRIPTION
The STS25NH3LL utilizes the latest advanced de-
sign rulesof ST’s proprietary STripFET™ technolo-
gy. This novel 0.6μ process coupled to unique
metallization techniques realizes the most ad-
vanced low voltage MOSFETin SO-8 ever pro-
duced.It is therefore suitable for the most
demanding DC-DC converter applications where
high efficiencyistobe achievedat high output cur-
rent.
APPLICATIONS DC-DC CONVERTERS FOR TELECOM AND
NOTEBOOK CPU CORE SYNCHRONOUS RECTIFIER
ABSOLUTE MAXIMUM RATINGS
(�) Pulse width limitedby safe operating area
STS25NH3LL
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THERMAL DATA
(*) When mountedon 1inch² FR4 Board,2ozofCu, t ≤ 10 sec.
ELECTRICAL CHARACTERISTICS (TJ=25°C UNLESS OTHERWISE SPECIFIED)
OFF (1)
DYNAMIC
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STS25NH3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STS25NH3LL
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Fig.3: Test Circuit For Diode Recovery Behaviour
Fig.2: Gate Charge test CircuitFig.1: Switching Times Test Circuit For
Resistive Load
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STS25NH3LL
STS25NH3LL
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