STS1NK60Z ,N-CHANNEL 600V 13 OHM 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
STS2300 , N-Channel E nhancement Mode Field EffectTransistor
STS2300 , N-Channel E nhancement Mode Field EffectTransistor
STS2301 , P-Channel E nhancement Mode Field Effect Transistor
STS2301 , P-Channel E nhancement Mode Field Effect Transistor
STS2301 , P-Channel E nhancement Mode Field Effect Transistor
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STS1NK60Z
N-CHANNEL 600V 13 OHM 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFET
1/8June 2003
STS1NK60ZN-CHANNEL 600V- 13Ω -0.25A -SO-8
Zener-Protected SuperMESH™ Power MOSFET TYPICAL RDS(on)= 13Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS)
ORDERING INFORMATION
STS1NK60Z2/8
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤0.3A, di/dt ≤200A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
THERMAL DATA
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/8
STS1NK60Z
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constantequivalentcapacitance givingthe same charging time asCoss when VDS increases from0to 80%
VDSS.
STS1NK60Z4/8
Static Drain-source On Resistance
Thermal ImpedanceSafe Operating Area
Transfer CharacteristicsOutput Characteristics
Transconductance
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STS1NK60Z
Source-drain Diode Forward Characteristics
Normalized On Resistancevs Temperature
Gate Chargevs Gate-source Voltage Capacitance Variations
Normalized
Normalized BVDSSvs Temperature
STS1NK60Z6/8
Fig.5: Test For Inductive
Fig.4: Gate Charge test Circuit
Fig.3: Switching
Resistive Load
