STS1NC60 ,N-CHANNEL 600V 12 OHM 0.3A SO-8 POWERMESH II MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0)DS GS 600 VV Drain ..
STS1NK60Z ,N-CHANNEL 600V 13 OHM 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFETABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V =0)600 VDS GSV Drain-g ..
STS2300 , N-Channel E nhancement Mode Field EffectTransistor
STS2300 , N-Channel E nhancement Mode Field EffectTransistor
STS2301 , P-Channel E nhancement Mode Field Effect Transistor
STS2301 , P-Channel E nhancement Mode Field Effect Transistor
T5002 , TELECOMMUNICATIONS PRODUCTS
T5004 , TELECOMMUNICATIONS PRODUCTS
T5005 , TELECOMMUNICATIONS PRODUCTS
T5006 , TELECOMMUNICATIONS PRODUCTS
T5007NL , ISDN S-INTERFACE LOW PROFILE DUAL SMT TRANSFORMERS
T5008 , TELECOMMUNICATIONS PRODUCTS
STS1NC60
N-CHANNEL 600V 12 OHM 0.3A SO-8 POWERMESH II MOSFET
1/8July 2001
STS1NC60N-CHANNEL 600V - 12Ω - 0.3A - SO-8
PowerMESH™II MOSFET
(1)ISD ≤0.3A, di/dt ≤100A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPICAL RDS(on) = 12Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe PowerMESH™II is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS)
ABSOLUTE MAXIMUM RATINGS(•)Pulse width limited by safe operating area
STS1NC60
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)OFF (1)
DYNAMIC
3/8
STS1NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %. Pulse width limited by safe operating area.
Thermal ImpedanceSafe Operating Area
STS1NC60
Gate Charge vs Gate-source Voltage Capacitance Variations
Tranconductance
Output Characteristics
5/8
STS1NC60
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
STS1NC60
Fig. 5: Test Circuit For Inductive Load Switching
Fig. 4: Gate Charge test Circuit
Fig. 3: Switching Times Test Circuit For Resistive Load
