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STS1HNK60STMN/a120666avaiN-CHANNEL 600V


STS1HNK60 ,N-CHANNEL 600VSTS1HNK60N-CHANNEL 600V - 8Ω -0.3A SO-8SuperMESH™Power MOSFETTYPE V R I PwDSS DS(on) DSTS1HNK60 600 ..
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STS1HNK60
N-CHANNEL 600V
1/8August 2003
STS1HNK60

N-CHANNEL 600V- 8Ω -0.3A SO-8
SuperMESH™Power MOSFET TYPICAL RDS(on)=8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED NEW HIGH VOLTAGE BENCHMARK
DESCRIPTION

The SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
SWITCH MODE LOW POWER SUPPLIES
(SMPS) LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS) LOW POWER BATTERY CHARGERS
ORDERING INFORMATION
STS1HNK60
2/8
ABSOLUTE MAXIMUM RATINGS
) Pulse width limitedby safe operating area
(1)ISD ≤0.3A, di/dt ≤100A/μs, VDD≤ V(BR)DSS,Tj≤ TJMAX.
THERMAL DATA
ELECTRICAL CHARACTERISTICS
(TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
3/8
STS1HNK60
ELECTRICAL CHARACTERISTICS
(CONTINUED)
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300μs, duty cycle1.5%. Pulse width limitedby safe operating area.
STS1HNK60
4/8
Thermal Impedance
Static Drain-source On ResistanceTransconductance
Output Characteristics
Safe Operating Area
5/8
STS1HNK60
Normalized BVDSSvs Temperature
NormalizedNormalized Gate Threshold Voltagevs Temp.
Gate Chargevs Gate-source Voltage
Source-drain Diode Forward Characteristics
STS1HNK60
6/8
Fig.5:
Test Inductive
Fig.4:
Gate Charge test CircuitFig.
Fig.3:
Switching
Resistive Load
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