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STS11NF30LSTN/a2467avaiN-CHANNEL 30V


STS11NF30L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
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STS11NF30L
N-CHANNEL 30V
1/8February 2002
STS11NF30L

N-CHANNEL 30V - 0.009 Ω - 11A SO-8
LOW GATE CHARGE STripFET™ POWER MOSFET TYPICAL RDS(on) = 0.009Ω @ 10 V TYPICAL Qg = 19nC @ 4.5 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED
DESCRIPTION

This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS

(••) Pulse width limited by safe operating area.
(•) Current limited by the package
(1) ISD ≤11A, di/dt ≤290A/μs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
INTERNAL SCHEMATIC DIAGRAM
STS11NF30L
THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF
ON (1)
DYNAMIC
3/8
STS11NF30L

SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ELECTRICAL CHARACTERISTICS (continued)
STS11NF30L
Output Characteristics
Transconductance
5/8
STS11NF30L

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature . .
STS11NF30L
Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive

Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times
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