STS10NF30L ,N-CHANNEL 30VSTS10NF30L®N - CHANNEL 30V - 0.011Ω - 10A SO-8STripFET™ POWER MOSFETPRELIMINARY DATATYPE V R IDSS ..
STS10PF30L ,P-CHANNEL 30VABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Drain-source Voltage (V = 0) 30 VDS GSV Drain- ..
STS11N3LLH5 , N-channel 30 V, 0.0117 Ω, 11 A, SO-8 STripFET™ V Power MOSFET
STS11N3LLH5 , N-channel 30 V, 0.0117 Ω, 11 A, SO-8 STripFET™ V Power MOSFET
STS11NF30L ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise specified)caseOFFSymbol Parameter Test Condi ..
STS11NF3LL ,N-CHANNEL 30VELECTRICAL CHARACTERISTICS (T = 25 °C UNLESS OTHERWISE SPECIFIED)CASEOFFSymbol Parameter Test Condi ..
T5002 , TELECOMMUNICATIONS PRODUCTS
T5004 , TELECOMMUNICATIONS PRODUCTS
T5005 , TELECOMMUNICATIONS PRODUCTS
T5006 , TELECOMMUNICATIONS PRODUCTS
T5007NL , ISDN S-INTERFACE LOW PROFILE DUAL SMT TRANSFORMERS
T5008 , TELECOMMUNICATIONS PRODUCTS
STS10NF30L
N-CHANNEL 30V
STS10NF30LN - CHANNEL 30V - 0.011Ω - 10A SO-8
STripFET POWER MOSFET
PRELIMINARY DATA TYPICAL RDS(on) = 0.011 Ω STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE
DESCRIPTION This Power MOSFET is the second generation of
STMicroelectronics unique " Single Feature
Size " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS DC MOTOR DRIVE DC-DC CONVERTERS BATTERY MANAGMENT IN NOMADIC
EQUIPMENT POWER MANAGEMENT IN
PORTABLE/DESKTOP PCs
June 2000
ABSOLUTE MAXIMUM RATINGS(•) Pulse width limited by safe operating area
1/6
THERMAL DATA
(*) Mounted on FR-4 board (t ≤ 10sec)
ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified)
OFF
ON (∗)
DYNAMIC
STS10NF30L2/6
ELECTRICAL CHARACTERISTICS (continued)SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(∗) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
STS10NF30L3/6
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 3: Switching Times Test Circuits ForResistive Load
Fig. 2: Unclamped Inductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load SwitchingAnd Diode Recovery Times
STS10NF30L4/6
STS10NF30L5/6
. consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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STS10NF30L6/6
