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Partno	Mfg	Dc	Qty	Available	Descript
STS10N3LH5	ST	N/a	5000	avai	N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET(TM); V Power MOSFET

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STS10N3LH5
N-channel 30 V, 0.019 Ohm;, 10 A, SO-8 STripFET(TM); V Power MOSFET

May 2009 Doc ID 15618 Rev 1 1/13
STS10N3LH5
N-channel 30 V , 0.019 Ω, 10 A, SO-8 ripFET™ V Power MOSFET
RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
Application Switching applications
Description
This STripFET™V Power MOSFET technology is
among the latest improvements, which have been
especially tailored to achieve very low on-state
resistance providing also one of the best-in-class
FOM.
Figure 1. Internal schematic diagram
Features
Table 1. Device summary

Contents STS10N3LH5
2/13 Doc ID 15618 Rev 1
Contents Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STS10N3LH5 Electrical ratings
Doc ID 15618 Rev 1 3/13

1 Electrical ratings
Table 2. Absolute maximum ratings Limited by wire bonding Pulse width limited by safe operating area Starting TJ = 25 °C, ID = 21 A, L= 0.2 mH
Table 3. Thermal resistance

Electrical characteristics STS10N3LH5
4/13 Doc ID 15618 Rev 1
2 Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. Static
Table 5. Dynamic
STS10N3LH5 Electrical characteristics
Doc ID 15618 Rev 1 5/13

Table 6. Switching on/off (resistive load)
Table 7. Source drain diode Pulsed: pulse duration = 300 µs, duty cycle 1.5 %

Electrical characteristics STS10N3LH5
6/13 Doc ID 15618 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characteristics Figure 5. Transfer characteristics
Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance
STS10N3LH5 Electrical characteristics
Doc ID 15618 Rev 1 7/13

Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics