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STQ2NK60ZR-AP ,N-CHANNEL 600VFEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically bee ..
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STD2HNK60-Z-1-STD2HNK60Z-1-STF2HNK60Z -STQ2HNK60ZR-AP
N-CHANNEL 600V
1/12April 2004
STQ2HNK60ZR-AP
STF2HNK60Z- STD2HNK60Z-1N-CHANNEL 600V- 4.4Ω - 2.0A TO-92/TO-220FP/IPAK
Zener-Protected SuperMESH™ MOSFET TYPICAL RDS(on)= 4.4Ω EXTREMELY HIGH dv/dt CAPABILITY ESD IMPROVED CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
DESCRIPTIONThe SuperMESH™ seriesis obtained through an
extreme optimizationof ST’s well established strip-
based PowerMESH™ layout.In additionto pushing
on-resistance significantly down, special careis tak-to ensurea very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full rangeof high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS AC ADAPTORS AND BATTERY CHARGERS SWITH MODE POWER SUPPLIES (SMPS)
ORDER CODES
STQ2HNK60ZR-AP- STF2HNK60Z- STD2HNK60Z-12/12
ABSOLUTE MAXIMUM RATINGS) Pulse width limitedby safe operating area
(1)ISD ≤2A, di/dt≤ 200 A/µs,VDD≤ V(BR)DSS,Tj≤ TJMAX.
(*) Current Limitedby package
THERMAL DATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODESThe built-in back-to-back Zener diodes have specifically been designedto enhance not only the device’s
ESD capability, but alsoto make them safely absorb possible voltage transients that may occasionallybe
applied from gateto source.In this respect the Zener voltageis appropriateto achievean efficient and
cost-effective interventionto protect the device’s integrity. These integrated Zener diodes thus avoid the
usageof external components.
3/12
STQ2HNK60ZR-AP- STF2HNK60Z- STD2HNK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SOURCE DRAIN DIODE
Note:1. Pulsed: Pulse duration=300µs, duty cycle1.5%. Pulse width limitedby safe operating area. Cosseq.is definedasa constant equivalent capacitance givingthe same charging timeas Coss when VDS increases from0to 80%
VDSS.
STQ2HNK60ZR-AP- STF2HNK60Z- STD2HNK60Z-14/12
Thermal Impedance for IPAK
Thermal Impedance for TO-92Safe Operating Area for TO-92
Safe Operating Area for TO-220FP
Safe Operating Area for IPAK
5/12
STQ2HNK60ZR-AP- STF2HNK60Z- STD2HNK60Z-1
Capacitance VariationsGate Chargevs Gate-source Voltage
Transfer Characteristics
Transconductance
Output Characteristics
Static Drain-source On Resistance
STQ2HNK60ZR-AP- STF2HNK60Z- STD2HNK60Z-16/12
Normalized BVDSSvs Temperature
Normalized On Resistancevs TemperatureNormalized Gate Thereshold Voltagevs Temp.
Source-drain
Maximum Avalanche Energyvs Temperature
