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STPS5L25B
LOW DROP POWER SCHOTTKY RECTIFIER
STPS5L25BJuly 2001- Ed:4A
LOW DROP POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS VERY LOW FORWARD VOLTAGE DROP FOR
LESS POWER DISSIPATION AND REDUCED
HEATSINK OPTIMIZED CONDUCTION/REVERSE LOSSES
TRADE-OFF WHICH MEANS THE HIGHEST
EFFICIENCYIN THE APPLICATIONS HIGH POWER SURFACE MOUNT MINIATURE
PACKAGE AVALANCHE RATED
FEATURES AND BENEFITSSingle Schottky rectifier suitedto Switched Mode
Power Supplies and high frequency DCto DC con-
verters.
This deviceis especially intended for use asa
Rectifierat the secondaryof 3.3V SMPS units.
DESCRIPTION
ABSOLUTE RATINGS (limiting values) dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS5L25B
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICSPulse test:*tp= 380μs,δ <2% evaluate the maximum conduction losses use the following equation:
P=0.2xIF(AV)+ 0.030IF2 (RMS) 1 2345 60.0
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current. 25 50 75 100 125 1500
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature (δ=0.5).
STPS5L25B1E-3 1E-2 1E-1 1E+00
100
IM(A)
Fig.3: Non repetitive surge peak forward current
versus overload duration (maximum values).
1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+00.0
Zth(j-c)/Rth(j-c)
Fig.4: Relative variationof thermal impedance
junctionto case versus pulse duration. 5 10 15 20 251E-3
1E-2
1E-1
1E+0
1E+1
1E+2
3E+2
IR(mA)
Fig.5: Reverse leakage current versus reverse
voltage applied (typical values). 5 10 20 30100
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
IFM(A)0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.00.1
Fig.7: Forward voltage drop versus forward cur-
rent (maximum values). 2 4 6 8 1012 14 1618 200
S(Cu) (cm²)
Rth(j-a) (°C/W)
Fig.8: Thermal resistance junctionto ambient ver-
sus copper surface under tab (Epoxy printed cir-
cuit board FR4, copper thickness: 35μm).
STPS5L25B
PACKAGE MECHANICAL DATADPAK Epoxy meets UL94,V0
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implicationor otherwise under any patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
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