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STPS5H100BSTN/a2940avaiHIGH VOLTAGE POWER SCHOTTKY RECTIFIER


STPS5H100B ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSn NEGLIGIBLE SWITCHING LOSSESDPAKn HIGH JUNCTION TEMPERATURE CAPABILITYn LOW L ..
STPS5H100B-TR ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSn NEGLIGIBLE SWITCHING LOSSESDPAKn HIGH JUNCTION TEMPERATURE CAPABILITYn LOW L ..
STPS5H100B-TR ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSn NEGLIGIBLE SWITCHING LOSSESDPAKn HIGH JUNCTION TEMPERATURE CAPABILITYn LOW L ..
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STPS5H100B
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS5H100B
July 2001- Ed:5B
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Schottky barrier rectifier designed for high fre-
quency miniature Switched Mode Power Sup-
plies such as adaptators and on board DCto converters.
DESCRIPTION
ABSOLUTE RATINGS
(limiting values)
MAIN PRODUCT CHARACTERISTICS
NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY LOW LEAKAGE CURRENT GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP AVALANCHE RATED
FEATURES AND BENEFITS
dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS5H100B
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS

Pulse test:* tp=5ms,δ <2%tp= 380μs,δ <2% evaluatethe maximum conduction losses use the following equation:
P=0.51xIF(AV) +0.02xIF2 (RMS)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.00.0
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current. 20 40 60 80 100 120 140 160 1800
IF(av)(A)
Fig.2:
Average forward current versus ambient
temperature (δ=0.5).
STPS5H100B
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig.3: Non repetitive surge peak forward current
versus overload duration (maximum values). 1020 3040 50 6070 8090 1001E-2
1E-1
1E+0
1E+1
1E+2
1E+3
5E+3
IR(μA)
Fig.5:
Reverse leakage current versus reverse
voltage applied.
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1
IFM(A)
Fig.7: Forward voltage drop versus forward cur-
rent (maximum values).
1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig.4: Relative variationof thermal impedance
junctionto case versus pulse duration. 10 10010
C(pF)
Fig.6: Junction capacitance versus reverse
voltage applied (typical values). 2 4 6 8 10 12 14 16 18 200
Rth(j-a) (°C/W)
Fig.8: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35μm).
STPS5H100B
PACKAGE MECHANICAL DATA

DPAK
FOOT PRINT
(in millimeters) Epoxy meets UL94,V0
Informationfurnishedis believedtobe accurateandreliable. However,STMicroelectronicsassumesno responsibilityforthe consequencesof
useof suchinformation norfor anyinfringementof patents orother rightsof third parties whichmayresult fromits use.No licenseisgrantedby
implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
change withoutnotice.Thispublication supersedesand replacesall information previouslysupplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2001 STMicroelectronics- Printedin Italy-All rights reserved.
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