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STPS40M100CTSTMN/a74avaiPower Schottky Rectifier


STPS40M100CT ,Power Schottky RectifierFeaturesA1 (1)■ High current capability K (2)A2 (3)■ Avalanche rated■ Low forward voltage drop curr ..
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STPS40M100CT
Power Schottky Rectifier

April 2010 Doc ID 15522 Rev 3 1/8
STPS40M100C

Power Schottky rectifier
Features
High current capability Avalanche rated Low forward voltage drop current High frequency operation
Description

This dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB and I2 PAK, this device is
intended to be used in notebook, game station
and desktop adaptors, providing in these
applications a good efficiency at both low and
high load.



Figure 1. Electrical characteristics (a)Table 1. Device summary
VARM and IARM must respect the reverse safe
operating area defined in Figure 11 VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics

Characteristics STPS40M100C

2/8 Doc ID 15522 Rev 3
1 Characteristics



When diodes 1 and 2 are used simultaneously
Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
o evaluate the conduction losses use the following equation:
P = 0.560 x IF(AV) + 0.004x IF2 (RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise stated)
For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025. Refer to Figure11 condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal resistance
Table 4. Static electrical characteristics
Pulse test: tp = 5 ms, δ < 2% Pulse test: tp = 380 µs, δ < 2%
STPS40M100C Characteristics
Doc ID 15522 Rev 3 3/8




Figure 2. Average forward power dissipation
versus average forward current
(per diode)
Figure 3. Average forward current per diode
versus ambient temperature
(δ = 0.5)
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5. Normalized avalanche power
derating versus junction
temperature
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values per diode)
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration

Characteristics STPS40M100C

4/8 Doc ID 15522 Rev 3


Figure 8. Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
Figure 9. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
Figure 10. Forward voltage drop versus
forward current (per diode)
Figure 11. Reverse safe operating area
(tp < 1 µs and Tj < 150 °C)
STPS40M100C Package information
Doc ID 15522 Rev 3 5/8

2 Package information
Epoxy meets UL94, V0 Cooling method: conduction Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOP ACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 5. TO-220AB dimensions

Package information STPS40M100C

6/8 Doc ID 15522 Rev 3
Mounting (soldering) the I2PAK metal slug (heatsink) with alloy, like a surface mount device,
IS NOT PERMITTED. A standard through-hole mounting is mandatory.
Table 6. I2 PAK dimensions
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