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STPS40L45CT |STPS40L45CTST N/a750avaiLOW DROP POWER SCHOTTKY RECTIFIER
STPS40L45CT. |STPS40L45CTSTN/a20avaiLOW DROP POWER SCHOTTKY RECTIFIER
STPS40L45CW |STPS40L45CWST N/a3000avai45V 40A Schottky Discrete Diode in a TO-247AC package


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STPS40L45CT -STPS40L45CT.-STPS40L45CW
LOW DROP POWER SCHOTTKY RECTIFIER
STPS40L45CG/CT/CW
January 2002- Ed:3A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and DCto DC converters.
Packaged in TO-220AB, TO-247 andD2 PAK
these devices are intendedfor usein low voltage,
high frequency inverters, free-wheeling and
polarity protection applications.
DESCRIPTION
Low forward voltage drop meaning very small
conduction losses Low switching losses allowing high frequency
operation Avalanche rated
FEATURES AND BENEFITS
ABSOLUTE RATINGS
(limiting values, per diode)
MAIN PRODUCTS CHARACTERISTICS
dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS40L45CT/CW
Pulse test:*tp=380 μs,δ <2% evaluate the conduction losses use the following equation:
P=0.28xIF(AV)+ 0.0105IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
THERMAL RESISTANCES
2 4 6 8 10121416182022240
PF(av)(W)
Fig.1:
Average forward power dissipation versus
average forward current (per diode).
When the diodes1 and2 are used simultaneously:Δ Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c) 25 50 75 100 125 1500
IF(av)(A)
Fig.2:
Average forward current versus ambient
temperature(δ= 0.5, per diode)
STPS40L45CT/CW
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig.3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-4 1E-3 1E-2 1E-1 1E+0
Zth(j-c)/Rth(j-c)
Fig.4: Relative variationof thermal impedance
junctionto case versus pulse duration. 5 10 15 20 25 30 35 40 451E-2
1E-1
1E+0
1E+1
1E+2
1E+3
IR(mA)
Fig.5:
Reverse leakage current versus reverse
voltage applied (typical values, per diode).0.1
C(nF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.61
IFM(A)
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode). 5 10 15 20 25 30 35 400
Rth(j-a) (°C/W)
Fig. 8:
Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35μm)
(STPS40L45CG only).
STPS40L45CT/CW
PACKAGE MECHANICAL DATA

TO-220AB Cooling method:C Recommended torque value: 0.55m.N Maximum torque value: 0.70 m.N
STPS40L45CG/CT/CW
PACKAGE MECHANICAL DATA
2 PAK Cooling method:by conduction (methodC)
FOOT PRINT
(in millimeters)2 PAK

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