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STPS30M80CT
Power Schottky rectifier
STPS30M80CPower Schottky rectifier
Features High junction temperature capability Optimized trade-off between leakage current
and forward voltage drop Low leakage current Avalanche capability specified Insulated package TO-220FPAB insulated voltage: 2000 V package capacitance: 45 pF
DescriptionThis dual diode Schottky rectifier is suited for high
frequency switch mode power supply.
Packaged in TO-220AB, I2 PAK, D2 PAK and TO-
220FP AB, this device is particularly suited for use
in notebook, game station, LCD TV and desktop
adapters, providing these applications with a
good efficiency at both low and high load.
Figure 1. Electrical characteristics(a)
Table 1. Device summary VARM and IARM must respect the reverse safe
operating area defined in Figure 13. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics
Characteristics STPS30M80C
1 Characteristics When the two diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 2. Absolute ratings (limiting values, per diode, at Tamb = 25 °C unless
otherwise specified) For temperature or pulse time duration deratings, please refer to figure 3 and 4. More details regarding the
avalanche energy measurements and diode validation in the avalanche are provided in the application
notes AN1768 and AN2025. See Figure13 condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
STPS30M80C Characteristics To evaluate the conduction losses use the following equation:
P = 0.455 x IF(AV) + 0.0113 x IF2 (RMS)
Table 4. Static electrical characteristics (per diode) Pulse test: tp = 5 ms, δ < 2 % Pulse test: tp = 380 µs, δ < 2 %
Figure 2. Average forward power dissipation
versus average forward current
(per diode)
Figure 3. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5. Normalized avalanche power
derating versus junction
temperature
Characteristics STPS30M80C
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 7. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 8. Relative thermal impedance
junction to case versus pulse
duration
Figure 9. Relative thermal impedance
junction to case versus pulse
duration (TO-220FPAB)
Figure 10. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
STPS30M80C Characteristics
Figure 14. Thermal resistance junction to ambient versus copper surface under tab for D2 PAK
Figure 12. Forward voltage drop versus
forward current (per diode)
Figure 13. Reverse safe operating area
(tp < 1 µs and Tj < 150 °C)
Package information STPS30M80C
2 Package information Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 5. TO-220AB dimensions
