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STPS30L45CG-TR
LOW DROP POWER SCHOTTKY RECTIFIER
STPS30L45CG/CR/CT/CW/CFPJuly 2003- Ed:3B
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap schottky rectifiers suited for
Switched Mode Power Supplies and high
frequency DCto DC converters.
Packagedin TO-247, TO-220AB, TO-220FPAB,2 PAK andI2 PAK these devices are intendedfor
usein low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
DESCRIPTION LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES LOW SWITCHING LOSSES ALLOWING HIGH
FREQUENCY OPERATION LOW THERMAL RESISTANCE AVALANCHE RATED INSULATED PACKAGE: TO-220FPAB
Insulating voltage: 2000V DC
Capacitance= 45pF AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
MAIN PRODUCTS CHARACTERISTICS
STPS30L45CG/CR/CT/CW/CFP
ABSOLUTE RATINGS (limiting values, per diode) dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
When the diodes1 and2 are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCESPulse test:*tp= 380μs,δ <2% evaluate the conduction losses use the following equation:= 0.330x IF(AV)+ 0.011IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
STPS30L45CG/CR/CT/CW/CFP02468 10 12 14 16 18 200
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 1500
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature (δ=0.5, per diode).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220FPAB only).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS30L45CG/CR/CT/CW/CFP 5 10 15 20 25 30 35 40 451E-2
1E-1
1E+0
1E+1
1E+2
5E+2
IR(mA)
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values, per diode). 5 10 20 50100
C(pF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.01
IFM(A)
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode). 5 10 15 20 25 30 35 400
Rth(j-a) (°C/W)
Fig. 10: Thermal resistance junctionto ambient
versus copper surface under tabforD2 PAK (Epoxy
printedcircuit board FR4, copper thickness:35μm).
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 6-1: Relative variationof thermal impedance
junctionto case versus pulse duration.
1E-3 1E-2 1E-1 1E+0 1E+10.0
Zth(j-c)/Rth(j-c)
Fig. 6-2: Relative variationof thermal impedance
junction to case versus pulse duration.
(TO-220FPAB)
STPS30L45CG/CR/CT/CW/CFP Cooling method:C Recommended torque value: 0.55 m.N Maximum torque value: 0.70 m.N
PACKAGE MECHANICAL DATATO-220AB
PACKAGE MECHANICAL DATA2 PAK
STPS30L45CG/CR/CT/CW/CFP
PACKAGE MECHANICAL DATATO-220FPAB
