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STPS30L120CTSTN/a100avaiPower Schottky Rectifier


STPS30L120CT ,Power Schottky RectifierElectrical characteristics I VTable 1. Device summary"Forward"I2 x I X Symbol ValueOI 2 x 1 ..
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STPS30L120CT
Power Schottky Rectifier
STPS30L120C
Power Schottky rectifier
Features
High junction temperature capability Avalanche capability specified Low forward voltage drop current High frequency operation Insulated package: TO-220FPAB Insulating voltage = 1500 V rms T ypical package capacitance 12 pF
Description

This dual center tap Schottky rectifier is suited for
high frequency switch mode power supplies.
Packaged in TO-220AB, I2P AK and TO-220FP AB,
this device provides adaptor designers with an
optimized price-performance ratio.
Figure 1. Electrical characteristics (a)

VARM and IARM must respect the reverse safe
operating area defined in Figure 13. VAR and IAR are
pulse measurements (tp < 1 µs). VR, IR, VRRM and VF,
are static characteristics.
Table 1. Device summary
Characteristics STPS30L120C
1 Characteristics



When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 2. Absolute ratings (limiting values, per diode)
Refer to Figure13 condition to avoid thermal runaway for a diode on its own heatsink
Table 3. Thermal parameters
STPS30L120C Characteristics

To evaluate the maximum conduction losses use the following equation :
P = 0.58 x IF(AV) + 0.0087 IF2 (RMS)


Table 4. Static electrical characteristics (per diode)
Pulse test : tp = 5 ms, δ < 2% Pulse test : tp = 380 µs, δ < 2%
Figure 2. Average forward power dissipation
versus average forward current
(per diode)
Figure 3. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5. Normalized avalanche power
derating versus junction
temperature
Characteristics STPS30L120C



Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 7. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 8. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AB, I2 PAK)
Figure 9. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Figure 10. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
STPS30L120C Characteristics

Figure 12. Forward voltage drop versus
forward current (per diode)
Figure 13. Reverse safe operating area
(tp < 1 µs and Tj < 150 °C)
Package information STPS30L120C
2 Package information
Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: .
ECOPACK® is an ST trademark.
Table 5. TO-220AB dimensions
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