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STPS20S100CFP-STPS20S100CT-STPS20S100CT.-STPS20S100CT.. Fast Delivery,Good Price
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STPS20S100CFPST,STN/a32000avaiPOWER SCHOTTKY RECTIFIER
STPS20S100CTONN/a5avaiPOWER SCHOTTKY RECTIFIER
STPS20S100CT. |STPS20S100CTSTN/a20avaiPOWER SCHOTTKY RECTIFIER
STPS20S100CT.. |STPS20S100CTSTN/a19avaiPOWER SCHOTTKY RECTIFIER


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T1133 , TRIANGULAR TYPE
T1136 , T1/CEPT/ISDN-PRI TRANSFORMERS Dual Surface Mount, 1500 Vrms, Extended and Standard Temperature Range
T1142NL , TELECOMMUNICATIONS PRODUCTS
T1144 , T1/CEPT/ISDN-PRI TRANSFORMERS Dual Surface Mount, 1500 Vrms, Extended and Standard Temperature Range
T1144 , T1/CEPT/ISDN-PRI TRANSFORMERS Dual Surface Mount, 1500 Vrms, Extended and Standard Temperature Range
T1144 , T1/CEPT/ISDN-PRI TRANSFORMERS Dual Surface Mount, 1500 Vrms, Extended and Standard Temperature Range


STPS20S100CFP-STPS20S100CT-STPS20S100CT.-STPS20S100CT..
POWER SCHOTTKY RECTIFIER
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Table 1: Main Product Characteristics
STPS20S100C

POWER SCHOTTKY RECTIFIER
REV. 1
March 2005
FEATURES AND BENEFITS
High junction temperature capability for
converters located in confined enrironment Low leakage current at high temperature Low static and dynamic losses as a result of the
Schottky barrier Avalanche specification
DESCRIPTION

Schottky barrier rectifier designed for high
frequency miniature Switched Mode Power
Supplies such as adaptators and on board DC/DC
converters. Packaged in TO-220AB, I2 PAK and
TO-220FPAB.
Table 2: Order Codes
STPS20S100C
Table 3: Absolute Ratings (limiting values, per diode)
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics (per diode)

Pulse test: * tp = 5 ms, δ < 2%
** tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.62 x I F(AV) + 0.009 IF2 (RMS)
* : thermal runaway condition for a diode on its own heatsink
When the diodes 1 and 2 are used simultaneously:
∆ Tj(diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x Rth(c)
dPtot
dTj--------------- 1
Rthja–()-------------------------->
STPS20S100C
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Figure 1: Average forward power dissipation
versus average forward current (per diode)
Figure 2: Average forward current versus
Figure 3: Normalized avalanche power
derating versus pulse duration
Figure 4: Normalized avalanche power
derating versus junction temperature
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
STPS20S100C
Figure 7: Relative variation of thermal
impedance junction to case versus pulse
duration (per diode)
Figure 8: Relative variation of thermal
impedance junction to case versus pulse
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 8: Junction capacitance versus reverse
voltage applied (typical values, per diode)
Figure 9: Forward voltage drop versus forward
current (per diode)
STPS20S100C
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Figure 10: TO-220FPAB Package Mechanical Data
Figure 11: I2 PAK Package Mechanical Data
STPS20S100C
Figure 12: TO-220AB Package Mechanical Data
Table 6: Ordering Information
Epoxy meets UL94, V0 Cooling method: by conduction (C) Recommended torque value: 0.8 m.N. Maximum torque value: 1.0 m.N.
Table 7: Revision History
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