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Partno	Mfg	Dc	Qty	Available	Descript
STPS20H100CG-TR \|STPS20H100CGTR	ST	N/a	151	avai	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

STPS20H100CG-TR ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2STPS20H100CTKn NEGLIGIBLE SWITCHING LOSSESA1n HIGH JUNCTION TEMPERATURE CAPA ..
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STPS20H100CG-TR
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS20H100CT/CF/CG/CR/CFP
July 2003-Ed:4G
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CUR-RENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE RATED INSULATED PACKAGE: ISOWATT220AB,
TO-220FPABInsulating Voltage= 2000VDC
Capacitance=45pF AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual centertap schottky rectifier designedfor
high frequency miniature Switched Mode
Power Supplies suchas adaptators andon
board DC/DC converters.
DESCRIPTION
ABSOLUTE RATINGS (limiting values,per diode) dPtot
dTj Rthja< − thermal runaway conditionfora diodeonits own heatsink
STPS20H100CT/CF/CG/CR/CFP
Whenthe diodes1 and2are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCES
Pulsetest:* tp=5ms,δ <2%tp=380μs,δ <2% evaluatethe maximum conduction lossesusethe following equation:
P=0.55xIF(AV)+ 0.009xIF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
STPS20H100CT/CF/CG/CR/CFP
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig.5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB,D2 PAK,I2 PAK)
1E-3 1E-2 1E-1 1E+00
140 IM(A)
Fig.6: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig.3: Normalized avalanche power derating
versus pulse duration. 46 8 10 120
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 150 1750
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature (δ=0.5,per diode).
STPS20H100CT/CF/CG/CG-1
1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 7-1: Relative variationof thermal impedance
junctionto case versus pulse duration (per diode)
(TO-220AB,D2 PAK,I2 PAK). 102030 4050 60708090 1001E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4 IR(μA)
Fig.8: Reverse leakage current versus reverse
voltage applied (typical values,per diode). 2 5 10 20 50 100100
C(pF)
Fig.9: Junction capacitance versus reverse
voltage applied (typical values,per diode).
1E-2 1E-1 1E+0 1E+10.0
1.0 Zth(j-c)/Rth(j-c)
Fig. 7-2: Relative variationof thermal impedance
junctionto case versus pulse duration (per diode)
(ISOWATT220AB, TO-220FPAB).
0.0 0.2 0.4 0.6 0.8 1.0 1.20.1
100.0 IFM(A)
Fig. 10: Forward voltage drop versus forward
current (maximum values,per diode). 5 10 15 20 25 30 35 400
Rth(j-a) (°C/W)
Fig. 11: Thermal resistance junctionto ambient
versus copper surfaceunder tab(Epoxy printedcircuit
board FR4, copper thickness: 35μm)(D2 PAK).
STPS20H100CT/CF/CG/CR/CFP
PACKAGE MECHANICAL DATA
TO-220AB
STPS20H100CT/CF/CG/CR/CFP
PACKAGE MECHANICAL DATA
ISOWATT220AB
PACKAGE MECHANICAL DATA
TO-220FPAB

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