STPS20170CT ,HIGH VOLTAGE POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITS■ HIGH JUNCTION TEMPERATURE CAPABILITYA2K■ GOOD TRADE OFF BETWEEN LEAKAGEA1CUR ..
STPS2030CG ,LOW DROP POWER SCHOTTKY RECTIFIERapplications.ABSOLUTE RATINGS (limiting values, per diode)Symbol Parameter Value UnitV 30 VRRMRepet ..
STPS2030CT ,LOW DROP POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2A2Kn Very small conduction lossesA1A1n Negligible switching lossesTO-220AB2D ..
STPS2045CF ,POWER SCHOTTKY RECTIFIERSTPS2045CT/CF/CG/CFP®POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSI 2x10AF(AV) A1KV 45 VRRMA ..
STPS2045CFP ,POWER SCHOTTKY RECTIFIERSTPS2045CT/CF/CG/CFP®POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSI 2x10AF(AV) A1KV 45 VRRMA ..
STPS2045CG ,POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSn VERY SMALL CONDUCTION LOSSESn NEGLIGIBLE SWITCHING LOSSESA2A2K Kn EXTREMELY ..
T1106NL , TELECOMMUNICATIONS PRODUCTS
T1107 , TELECOMMUNICATIONS PRODUCTS
T1108 , TELECOMMUNICATIONS PRODUCTS
T1108 , TELECOMMUNICATIONS PRODUCTS
T1108NL , TELECOMMUNICATIONS PRODUCTS
T1111NL , TELECOMMUNICATIONS PRODUCTS
STPS20170CT
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS20170CTMarch 2004- Ed:1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE
CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITSDual center tap schottky rectifier designed for
high frequency Switched Mode Power
Supplies.
DESCRIPTION Thermal runaway conditionfora diodeon itsown heatsink δPtot/δTj< 1/(Rth(j-a))
ABSOLUTE RATINGS (limiting values, per diode)
STPS20170CT
THERMAL RESISTANCESPulse test:*tp=5 ms,δ <2%tp= 380µs,δ <2% evaluate the conduction losses use the following equation:= 0.64x IF(AV)+ 0.011IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes1 and2 are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
STPS20170CT
P(W)F(AV)0123456 789 10 11 12
Fig.1: Average forward power dissipation versus
average forward current (per diode).
I(A)F(AV) 25 50 75 100 125 150 175
Fig.2: Average forward current versus ambient
temperature(δ= 0.5, per diode).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1µs)
ARMp
ARM
Fig.3: Normalized avalanche power derating ver-
sus pulse duration.
1.E-03 1.E-02 1.E-01 1.E+00
I(A)M
Fig.5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1.E-03 1.E-02 1.E-01 1.E+00
Z/Rth(j-c) th(j-c)
Fig.6: Relative variationof thermal impedance
junctionto case versus pulse duration.
STPS20170CT1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
1.E+05 25 50 75 100 125 150 175
I(µA)R
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
1000 10 100 1000
C(pF)
Fig.8: Junction capacitance versus reverse voltage
applied (typical values, per diode).
I(A)FM0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Fig.9: Forward voltage drop versus forward
current (per diode).
STPS20170CT
PACKAGE MECHANICAL DATATO-220AB
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