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STPS1L30MSTMN/a24000avaiLOW DROP POWER SCHOTTKY RECTIFIER
STPS1L30MSTN/a16500avaiLOW DROP POWER SCHOTTKY RECTIFIER


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STPS1L30M
LOW DROP POWER SCHOTTKY RECTIFIER
STPS1L30M
June 2002-Ed:1A
LOW DROP POWER SCHOTTKY RECTIFIER Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency&
extended battery life Low thermal resistance
FEATURES AND BENEFITS

Single Schottky rectifier suited for switch mode
power supplies and high frequency DCto DC
converters.
Packagedin ST Mite, this deviceis intended for
usein low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due the small sizeof the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.
DESCRIPTION
ABSOLUTE RATINGS
(limiting values)
MAIN PRODUCT CHARACTERISTICS
dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS1L30M
Pulse test: *tp≤ 380 μs, δ≤ 2% evaluate the conduction losses use the following equation:
P=0.34xIF(AV)+ 0.07IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCE
STPS1L30M
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 (W)F(AV)
Fig. 1:Conduction
losses versus average current.
1.1 25 50 75 100 125 150 (A)F(AV)
Fig.2:
Average forward current versus ambient
temperature(δ= 0.5)
1.E-03 1.E-02 1.E-01 1.E+00(A)M
Fig.3:
Non repetitive surge peak forward current
versus overload duration (maximum values).
1.E-04 1.E-03 1.E-02 1.E-01
Zth(j-c)/Rth(j-c)
Fig.4:
Relative variationof thermal impedance
junctionto case versus pulse duration.
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
024681012141618202224262830 (mA)R
Fig.5:
Reverse leakage current versus reverse
voltage applied (typical values).
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03 25 50 75 100 125 150 (mA)R
Fig.6:
Reverse leakage current versus junction
temperature (typical values).
STPS1L30M
1000 10 100
C(pF)
Fig.7:
Junction capacitance versus reverse volt-
age applied (typical values).
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 (A)FM
Fig.8:
Forward voltage drop versus forward cur-
rent.
250 20 40 60 80 100 120 140 160 180 200 (°C/W)th(j-a)
Fig.9:
Thermal resistance junctionto ambient ver-
sus copper surface under tab (epoxy printed board
FR4, Cu= 35μm, typical values).
STPS1L30M
PACKAGE MECHANICAL DATA
Mite
Note:
The anodeis connectedtothe longer tab
The cathodeis connectedto the shorter tab (heatsink)
FOOTPRINT
(dimensions in mm)
STPS1L30M
Information furnishedisbelievedtobe accurateand reliable. However, STMicroelectronicsassumesno responsibilityforthe consequencesof
use ofsuch informationnor forany infringement ofpatentsor otherrightsofthirdpartieswhich may result fromitsuse. Nolicenseis grantedby
implicationor otherwise under any patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
changewithout notice. This publication supersedesand replaces allinformation previously supplied.
STMicroelectronics productsarenot authorizedforuseas critical componentsinlife support devicesor systems without express writtenap-
provalof STMicroelectronics.
TheST logoisa registered trademarkof STMicroelectronics 2002 STMicroelectronics- Printedin Italy-All rights reserved.
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