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STPS16L45CFP
LOW DROP POWER SCHOTTKY RECTIFIER
STPS16L45CT/CFPJanuary 2002-Ed:2C
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and high frequency DCto DC converters.
Packagedin TO-220AB and TO-220FPAB, these
devices are intended for usein low voltage, high
frequency converters, free-wheeling and polarity
protection applications.
DESCRIPTION Low forward voltage drop meaning very small
conduction losses Low switching losses allowing high frequency
operation Insulated package: TO-220FPAB
Insulated voltage: 2000V DC
Capacitance:12pF
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values, per diode)
MAIN PRODUCTS CHARACTERISTICS dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS16L45CT/CFPPulse test:*tp= 380 μs,δ <2% evaluate the conduction losses use the following equation:
P=0.26xIF(AV)+ 0.024IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes1 and2 are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCES012345 6 789 100.0
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 1500
IF(av)(A)
Fig. 2: Average current versus ambient
temperature(δ= 0.5) (per diode).
STPS16L45CT/CFP1E-3 1E-2 1E-1 1E+00
120
IM(A)
Fig.3-1: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode, TO-220AB).
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 4-1: Relative variationof thermal impedance
junction to case versus pulse duration
(TO-220AB). 5 10 15 20 25 30 35 40 451E-2
1E-1
1E+0
1E+1
1E+22E+2
IR(mA)
Fig.5: Reverse leakage current versus reverse
voltage applied (typical values) (per diode). 5 10 20 50100
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3-2: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode, TO-220FPAB).
1E-3 1E-2 1E-1 1E+0 1E+10.0
Zth(j-c)/Rth(j-c)
Fig. 4-2: Relative variationof thermal impedance
junction to case versus pulse duration
(TO-220FPAB).
STPS16L45CT/CFP
PACKAGE MECHANICAL DATATO-220FPAB
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.80.1
100.0
IFM(A)
Fig. 7: Forward voltage drop versus forward
current (maximum values) (per diode).
:
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