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STPS16L40CT
LOW DROP POWER SCHOTTKY RECTIFIER
STPS16L40CTAugust 2002-Ed:5B
LOW DROP POWER SCHOTTKY RECTIFIER
Dual centertap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and high frequencyDCtoDC converters.
Packagedin TO-220AB this deviceis intendedfor
usein low voltage, high frequency converters,
free-wheeling and polarity protection applications.
DESCRIPTION LOW FORWARD VOLTAGE DROP FOR LESS
POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING
HIGH FREQUENCY OPERATION AVALANCHE RATED
FEATURES AND BENEFITS
ABSOLUTE RATINGS (limiting values,per diode)
MAIN PRODUCTS CHARACTERISTICS dPtot
dTj Rthja< − thermal runaway conditionfora diodeonits own heatsink
STPS16L40CTPulse test:*tp= 380μs,δ <2% evaluatethe conduction losses usethe following equation:
P=0.26xIF(AV)+ 0.024IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
THERMAL RESISTANCES012345 6 789 100.0
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 1500
IF(av)(A)
Fig. 2: Average current versus ambient
temperature(δ= 0.5) (per diode).
Whenthe diodes1 and2are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
STPS16L40CT1E-3 1E-2 1E-1 1E+00
120
IM(A)
Fig.3: Non repetitive surge peak forward current
versus overload duration (maximum values) (per
diode).
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig.4: Relative variationof thermal impedance
junctionto case versus pulse duration. 5 10 15 20 25 30 35 401E-2
1E-1
1E+0
1E+1
1E+2
2E+2
IR(mA)
Fig.5: Reverse leakage current versus reverse
voltage applied (typical values) (per diode). 5 10 20 50100
C(pF)
Fig.6: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.80.1
IFM(A)
Fig.7: Forward voltage drop versus forward
current (maximum values) (per diode).
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