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STPS16045TVSTN/a300avaiPOWER SCHOTTKY RECTIFIER


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STPS16045TV
POWER SCHOTTKY RECTIFIER
STPS16045TV
June 1999 - Ed: 3A
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS

VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
EXTREMELY FAST SWITCHING
LOW THERMAL RESISTANCE
INSULATED PACKAGE:
Insulating voltage = 2500 V(RMS)
Capacitance = 45 pF
FEATURES AND BENEFITS

Dual power Schottky rectifier suited for Switched
Mode Power Supplies and high frequency DC to
DC converters.
Packaged in ISOTOP, this device is especially in-
tended for use in low voltage, high frequency in-
verters, free wheeling and polarity protection
applications.
DESCRIPTION
ABSOLUTE RATINGS (limiting values, per diode)

ISOTOP is a trademark of STMicroelectronics
* : dPtot
dTj < 1
Rth(j−a) thermal runaway condition for a diode on its own heatsink
1/4
When the diodes 1 and 2 are used simultaneously :
Δ Tj(diode 1) = P(diode) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (per diode)

Pulse test : * tp = 380 μs, δ < 2%
To evaluate the conduction losses use the following equation :
P = 0.48 x IF(AV) + 0.00262 x IF2 (RMS) 25 50 75 100 125 1500
IF(av)(A)
Fig. 2: Average current versus case temperature

(δ = 0.5, per diode). 102030 40506070 8090 1000
PF(av)(W)
Fig. 1: Average forward power dissipation versus

average forward current (per diode).
STPS16045TV

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1E-3 1E-2 1E-1 1E+0 5E+00.0
Zth(j-c)/Rth(j-c)
Fig. 4: Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode). 5 10 15 20 25 30 35 40 451E+0
1E+1
1E+2
1E+3
1E+4
1E+5
5E+5
IR(μA)
Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values, per diode). 5 10 20 500.1
C(nF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.210
IFM(A)
Fig. 7: Forward voltage drop versus forward
current (maximum values, per diode).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
STPS16045TV

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. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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PACKAGE MECHANICAL DATA

ISOTOP
Cooling method: by conduction (C)
Recommended torque value: 1.3 N.m.
Maximum torque value: 1.5 N.m.
Epoxy meets UL94,V0
STPS16045TV

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