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STPS15L45CBSTN/a39avaiLOW DROP POWER SCHOTTKY RECTIFIER


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STPS15L45CB
LOW DROP POWER SCHOTTKY RECTIFIER
STPS15L45CB
February 2002-Ed:1A
LOW DROP POWER SCHOTTKY RECTIFIER
Dual center tab Schottky rectifier suitedfor Switch
Mode Power Supply and high frequency DCto DC
converters.
Packagein DPAK, this deviceis intended for use low voltage, high frequency inverters,
free-wheeling and polarity protection applications.
DESCRIPTION
Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop
FEATURES AND BENEFITS
ABSOLUTE RATINGS
(limiting values, per diode)
MAIN PRODUCTS CHARACTERISTICS
dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS15L45CB
Pulse test:*tp= 380 μs,δ <2% evaluate the conduction losses use the following equation:
P=0.29xIF(AV)+ 0.023IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
(per diode)
When the diodes1 and2 are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
THERMAL RESISTANCES
5.5 23 45 67 89 10
PF(av)(W)
Fig.1:
Conduction losses versusaverage current. 25 50 75 100 125 150
IF(av)(A)
Fig.2:
Average forward current versus ambient
temperature(δ= 0.5).
STPS15L45CB
1.E-03 1.E-02 1.E-01 1.E+00
IM(A)
Fig.3:
Non repetitive surge peak forward current
versus overload duration (maximum values).
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02 5 10 15 20 25 30 35 40 45
IR(mA)
Fig.5:
Reverse leakage current versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
IFM(A)
Fig.7:
Forwardvoltage dropversus forwardcurrent.
02468 10 12 14 16 18 20
Rth(j-a)(°C/W)
Fig.8:
Thermal resistance junctionto ambient versus
copper surface under tab (epoxy printed board FR4,= 35μm).
1.E-03 1.E-02 1.E-01 1.E+00
Zth(j-c)/Rth(j-c)
Fig.4:
Relative variationof thermal impedance
junctionto case versus pulse duration.
10.0 10 100
C(nF)
Fig.6:
Junction capacitance versus reverse voltage
applied (typical values).

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