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Partno	Mfg	Dc	Qty	Available	Descript
STPS1545CG-TR \|STPS1545CGTR	ST	N/a	50000	avai	POWER SCHOTTKY RECTIFIER

STPS1545CG-TR ,POWER SCHOTTKY RECTIFIERSTPS1545CT/CF/CG/CFP/CR®POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSA1KI 2 x 7.5 AF(AV)A2V ..
STPS1545CT ,POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSA2A2KKn Very small conduction lossesA1A1n Negligible switching lossesTO-220ABI ..
STPS1545CT.. ,POWER SCHOTTKY RECTIFIERapplications.A2KA12I PAKSTPS1545CRAugust 2002 - Ed: 4F1/8STPS1545CT/CF/CG/CFP/CRABSOLUTE RATINGS (l ..
STPS1545D ,POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSSTPS1545FPn Very small conduction lossesn Negligible switching lossesn Extreme ..
STPS1545F ,POWER SCHOTTKY RECTIFIERapplications.D PAKSTPS1545GABSOLUTE RATINGS (limiting values)Symbol Parameter Value UnitV Repetitiv ..
STPS1545FP ,POWER SCHOTTKY RECTIFIERSTPS1545D/F/FP/R/G®POWER SCHOTTKY RECTIFIERMAIN PRODUCT CHARACTERISTICSI 15 AF(AV)V 45 VRRMTj (max) ..
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STPS1545CG-TR
POWER SCHOTTKY RECTIFIER
STPS1545CT/CF/CG/CFP/CR
July 2003- Ed:5F
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING INSULATED PACKAGE: ISOWATT220AB,
TO-220FPAB
Insulating voltage= 2000V DC
Capacitance= 12pF AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITS
Dual center tap Schottky rectifier suited for
SwitchMode Power Supply and high frequency DC DC converters.
Packaged eitherin TO-220AB, ISOWATT220AB,
TO-220FPAB,D2 PAKorI2 PAK, this deviceis es-
pecially intended for usein low voltage, high fre-
quency inverters, free wheeling and polarity
protection applications.
DESCRIPTION
STPS1545CT/CF/CG/CFP/CR
When the diodes1 and2 are used simultaneously:Tj (diode1)=P (diode1)x Rth(j-c) (per diode)+P (diode2)x Rth(c)
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Pulse test:*tp= 380μs,δ <2% evaluate the conduction losses use the following equation:
P=0.42xIF(AV)+ 0.020IF2 (RMS)
ABSOLUTE RATINGS (limiting values, per diode) dPtot
dTj Rthj a< − thermal runaway conditionfora diodeonits own heatsink
STPS1545CT/CF/CG/CFP/CR
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB andD2 PAK). 25 50 75 100 125 150 1750
IF(av)(A)
Fig. 2: Average current versus ambient
temperature (δ= 0.5, per diode).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
0123456789 100
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS1545CT/CF/CG/CFP/CR 5 10 15 20 25 30 35 40 451E-1
1E+0
1E+1
1E+2
1E+3
1E+4
5E+4
IR(μA)
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values, per diode). 5 10 20 50100
C(pF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1
IFM(A)
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode). 2 4 6 8 1012141618200
Rth(j-a) (°C/W)
Fig. 10: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35μm).
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig. 6-1: Relative variationof thermal transient
impedance junctionto case versus pulse duration
(per diode) (TO-220AB andD2 PAK).
1E-3 1E-2 1E-1 1E+0 1E+10.0
Zth(j-c)/Rth(j-c)
Fig. 6-2: Relative variationof thermal transient
impedance junctionto case versus pulse duration
(per diode) (ISOWATT220AB, TO-220FPAB).
STPS1545CT/CF/CG/CFP/CR
PACKAGE MECHANICAL DATA2 PAK
FOOTPRINT DIMENSIONS (in millimeters)
STPS1545CT/CF/CG/CFP/CR
PACKAGE MECHANICAL DATA
TO-220AB
PACKAGE MECHANICAL DATA
TO-220FPAB

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