STPS1045B-TR ,POWER SCHOTTKY RECTIFIERABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitV Repetitive peak reverse voltage 45 VRRMI / pin ..
STPS1045B-TR ,POWER SCHOTTKY RECTIFIERFEATURES AND BENEFITSn NEGLIGIBLE SWITCHING LOSSESK An LOW FORWARD DROP VOLTAGEn LOW CAPACITANCEAAn ..
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STPS1045B-TR
POWER SCHOTTKY RECTIFIER
STPS1045B/HJuly 2003- Ed:3B
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD DROP VOLTAGE LOW CAPACITANCE HIGH REVERSE AVALANCHE SURGE
CAPABILITY AVALANCHE CAPABILITY SPECIFIED
FEATURES AND BENEFITSHigh voltage Schottky rectifier suited for Switch
Mode Power Supplies and other Power
Converters.
Packagedin DPAK and IPAK, these devices are
intended for use in high frequency circuitries
where low switching losses are required.
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
STPS1045B/H
THERMAL RESISTANCES
STATIC ELECTRICAL CHARACTERISTICSPulse test:*tp= 380μs,δ <2%
**tp=5 ms,δ <2% evaluate the maximum conduction losses use the following equation:
P=0.42xIF(AV)+ 0.015IF2 (RMS)
01234567 89 10 11 120
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current. 25 50 75 100 125 150 1750
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature (δ=0.5).
1.2 25 50 75 100 125 150
P(t) (25°C)
ARMp
ARM
Fig.4: Normalized avalanche power derating
versus junction temperature.
0.10.01 1
0.1 100 1000
P(t) (1μs)
ARMp
ARM
Fig. 3: Normalized avalanche power derating
versus pulse duration.
STPS1045B/H 5 10 15 20 25 30 35 40 451E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
IR(μA)
Fig.7: Reverse leakage current versus reverse
voltage applied (typical values).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.60.1
IFM(A)
Fig. 9: Forward voltage drop versus forward
current (maximum values). 5 10 20 50100
C(pF)
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values). 2 4 6 8 10 12 14 16 18 200
Rth(j-a) (°C/W)
Fig. 10: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35μm)
(STPS1045B).
1E-3 1E-2 1E-1 1E+00
IM(A)
Fig.5: Non repetitive surge peak forward current
versus overload duration (maximum values).
1E-4 1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig.6: Relative variationof thermal impedance
junctionto case versus pulse duration.
STPS1045B/H
PACKAGE MECHANICAL DATAIPAK COOLING METHOD: BY CONDUCTION (C)
STPS1045B/H
PACKAGE MECHANICAL DATADPAK
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implicationor otherwise underany patentor patent rightsof STMicroelectronics. Specifications mentionedinthis publicationare subjectto
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FOOT PRINT DIMENSIONS (in millimeters) COOLING METHOD: BY CONDUCTION (C)
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