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STPS10150CT
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
STPS10150CT/CGApril 2001- Ed:4B
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CUR-
RENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT
FEATURES AND BENEFITSDual center tap schottky rectifier designed for
high frequency Switched Mode Power Sup-
plies.
DESCRIPTION
ABSOLUTE RATINGS (limiting values, per diode)
STPS10150CT/CG
THERMAL RESISTANCESPulse test:* tp=5ms,δ <2%tp= 380μs,δ <2% evaluate the conduction losses use the following equation:= 0.65 IF(AV)+ 0.02IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS (per diode)
When the diodes1 and2 are used simultaneously: Tj(diode1)= P(diode1)x Rth(j-c)(Per diode)+ P(diode2)x Rth(c)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.00.0
PF(av)(W)
Fig.1: Average forward power dissipation versus
average forward current (per diode). 25 50 75 100 125 150 1750
IF(av)(A)
Fig.2: Average forward current versus ambient
temperature(δ= 0.5, per diode).
STPS10150CT/CG1E-3 1E-2 1E-1 1E+00
IM(A)
Fig.3: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
1E-3 1E-2 1E-1 1E+00.0
Zth(j-c)/Rth(j-c)
Fig.4: Relative variationof thermal impedance
junctionto case versus pulse duration (per diode). 25 50 75 100 125 1501E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
IR(μA)
Fig.5: Reverse leakage current versus reverse
voltage applied (typical values, per diode) 2 5 10 20 50 100 20010
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values, per diode).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.00.1
IFM(A)
Fig.7: Forward voltage drop versus forward
current (maximum values, per diode). 2 4 6 8 101214 1618200
Rth(j-a) (°C/W)
Fig.8: Thermal resistance junctionto ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35μm)
(STPS10150CG only).
STPS10150CT/CG
PACKAGE MECHANICAL DATATO-220AB
STPS10150CT/CG
PACKAGE MECHANICAL DATA2 PAK
FOOT PRINT DIMENSIONS (in millimeters)
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